SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

• Main Author: NAKAI HITOSHI
• Format: Patent
• Language: English; Japanese
• Published: 11.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing device and a substrate processing method with which it is possible to efficiently suppress the contamination of a substrate due to the collision of a process liquid ejected from the substrate against peripheral members.SOLUTION: An outside annular member 13 has an upper guidance face 60 for guiding a process liquid existing on the top face of a substrate W to radially outward RO of a circumferential edge on the top face of the substrate W by a centrifugal force. An outside annular guide part 15 has a counter guidance face 80a facing the upper guidance face 60 from above with a space therebetween, for guiding a process liquid existing on top of the upper guidance face 60 to radially outward RO together with the upper guidance face 60. A third guard 71C receives the process liquid discharged from the outside annular member 13 while the underside of a third extension part 76C is located at a guidance face proximity position closed to the upper guidance face 60. A first guard 71A positions a process liquid ejection space 66 which the process liquid discharged from the outside annular member 13 passes through, at an ejection space forming position that a first extension part 76A forms together with the third extension part 76C.SELECTED DRAWING: Figure 5B 【課題】基板から排除される処理液が周囲の部材に衝突することに起因する基板の汚染を効率的に抑制することができる基板処理装置および基板処理方法を提供する。【解決手段】外側環状部材１３は、基板Ｗの上面に存在する処理液を遠心力によって基板Ｗの上面の周縁部よりも径方向外方ＲＯに案内する上側案内面６０を有する。外側環状案内部１５は、上側案内面６０に間隔を空けて上方から対向し、上側案内面６０上に存在する処理液を上側案内面６０とともに径方向外方ＲＯに案内する対向案内面８０ａを有する。第３ガード７１Ｃは、第３延設部７６Ｃの下面が上側案内面６０に近接する案内面近接位置に配置された状態で外側環状部材１３から排出される処理液を受ける。第１ガード７１Ａは、外側環状部材１３から排出される処理液が通る処理液排出空間６６を第３延設部７６Ｃとともに第１延設部７６Ａが形成する排出空間形成位置に位置する。【選択図】図５Ｂ