PLASMA PROCESSING DEVICE, INSPECTION METHOD USING PLASMA PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING PLASMA PROCESSING DEVICE

• Main Authors: FUJII KAZUYUKI, INOUE YOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 19.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To detect a minute change in a state of plasma.SOLUTION: A plasma processing apparatus PTD1 includes: a chamber 10; and an electrostatic chuck provided inside the chamber 10. A probe PL for detecting a potential of the plasma is attached to the chamber 10 so as to be separated from the electrostatic chuck. The probe PL includes: a rod-shaped conductive member CP; and a cylindrical dielectric member DP covering the conductive member CP. With such the probe PL, a small change in a state of the plasma generated inside the chamber 10 can be detected.SELECTED DRAWING: Figure 2 【課題】プラズマの状態の微小な変化を検知する。【解決手段】プラズマ処理装置ＰＴＤ１は、チャンバ１０と、チャンバ１０の内部に設けられた静電チャックとを有する。チャンバ１０には、静電チャックから離間するように、プラズマの電位を検知するためのプローブＰＬが取り付けられている。プローブＰＬは、棒状の導電性部材ＣＰと、導電性部材ＣＰを覆う円筒状の誘電性部材ＤＰとを有する。このようなプローブＰＬによって、チャンバ１０の内部に生成されているプラズマの状態の微小な変化を検知できる。【選択図】図２