RESISTANCE CHANGE TYPE MEMORY AND DRIVE METHOD THEREOF

• Main Authors: DOMAE SUMIKO, TAKASHIMA DAIZABURO
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a resistance change type memory capable of improving a reset operation.SOLUTION: The resistance change type memory in an embodiment comprises a resistance change film capable of reversibly changing between a low resistance state and a high resistance state, a selection transistor and a dr...