RESISTANCE CHANGE TYPE MEMORY AND DRIVE METHOD THEREOF

• Main Authors: DOMAE SUMIKO, TAKASHIMA DAIZABURO
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a resistance change type memory capable of improving a reset operation.SOLUTION: The resistance change type memory in an embodiment comprises a resistance change film capable of reversibly changing between a low resistance state and a high resistance state, a selection transistor and a drive part for driving them. The gate, drain and sauce of the selection transistor are connected to one end of the resistance change film, a word line and a bit line, respectively, and a plate line is connected to the other end of the resistance change film. The drive part applies a voltage VL equal to or more than the threshold voltage of the selection transistor to the word line when the resistance change film is in the low resistance state, applies a voltage V2 at which the resistance change film changes to the high resistance state from the low resistance state between the bit line and the plate line while applying the voltage VL, and applies a voltage V1 less than the threshold voltage of the selection transistor to the word line while applying the voltage V2.SELECTED DRAWING: Figure 5 【課題】 リセット動作の改良を図れる抵抗変化型メモリを提供すること。【解決手段】 実施形態の抵抗変化型メモリは、低抵抗状態と高抵抗状態の間を可逆的に変化可能である抵抗変化膜、選択トランジスタ、これらを駆動する駆動部を含む。選択トランジスタのゲート、ドレイン及びソースはそれぞれ抵抗変化膜の一端、ワード線及びビット線に接続され、抵抗変化膜の他端にはプレート線が接続される。駆動部は、抵抗変化膜が低抵抗状態であるときに、ワード線に選択トランジスタのしきい値電圧以上の電圧ＶＬを印加し、電圧ＶＬを印加している間に、ビット線とプレート線との間に、抵抗変化膜が低抵抗状態から高抵抗状態に変わる電圧Ｖ２を印加し、電圧Ｖ２を印加している間に、ワード線に選択トランジスタのしきい値電圧未満の電圧Ｖ１を印加する。【選択図】 図５