SEMICONDUCTOR DEVICE, SUBSTRATE WITH BUMP, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: INOUE TADASHI, YAMAMOTO HIROKAZU, KOYAMA TAKUO, SUZUKI HIROYA, YAMAMOTO HIROO
• Format: Patent
• Language: English; Japanese
• Published: 17.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device and a substrate with a bump that improve reliability, and to provide a method of manufacturing such a semiconductor device.SOLUTION: A semiconductor device comprises: a first element that is one of a supporting body and a semiconductor chip that face each other; a second element that is the other one of the supporting body and the semiconductor chip; a first bump electrode 41 arranged on the first element; and a second bump electrode arranged on the second element and bonded with the first bump electrode 41. The first bump electrode 41 is provided with: an opening 42 that opens in the facing direction where the first element and the second element face each other; and a gap 43 extending from the opening 42. The opening 42 has such a shape that an area of the opening 42 becomes smaller as it approaches the first element. The second bump electrode is arranged at the opening 42, and a tip of the second bump electrode enters the gap 43 and is bonded with an inner surface 43a of the gap 43.SELECTED DRAWING: Figure 6 【課題】信頼性の向上が図られた半導体装置及びバンプ付き基板、並びにそのような半導体装置の製造方法を提供する。【解決手段】半導体装置は、互いに向かい合う支持体及び半導体チップの一方である第１要素と、支持体及び半導体チップの他方である第２要素と、第１要素上に配置された第１バンプ電極４１と、第２要素上に配置され、第１バンプ電極４１に接合された第２バンプ電極と、を備える。第１バンプ電極４１には、第１要素と第２要素とが向かい合う対向方向に開口した開口部４２と、開口部４２から延在する間隙部４３と、が設けられている。開口部４２は、第１要素に近づくほど開口部４２の面積が小さくなる形状を有している。第２バンプ電極は、開口部４２に配置されており、第２バンプ電極の先端部は、間隙部４３に入り込み、間隙部４３の内面４３ａに接合されている。【選択図】図６