THERMOELECTRIC MODULE AND MANUFACTURING METHOD THEREOF

To provide a flexible thermoelectric module having a thickness of a bulk-type thermoelectric module, while maintaining thermoelectric performance of a thin film type thermoelectric module.SOLUTION: A thermoelectric module 100 is constituted by laminating an intermediate layer substrate 2, including...

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Bibliographic Details
Main Authors TOKIOKA HIDETADA, MORIOKA TAKAYUKI, YAMASHITA AKIRA
Format Patent
LanguageEnglish
Japanese
Published 10.09.2020
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Summary:To provide a flexible thermoelectric module having a thickness of a bulk-type thermoelectric module, while maintaining thermoelectric performance of a thin film type thermoelectric module.SOLUTION: A thermoelectric module 100 is constituted by laminating an intermediate layer substrate 2, including a P type thin film thermoelectric element 21 and an N type thin film thermoelectric element 22, on a lowermost substrate 1 including a P type thin film thermoelectric element 11 and an N type thin film thermoelectric element 12. A thermoelectric conversion element is formed when the P type thin film thermoelectric element 21 is laminated on the P type thin film thermoelectric element 11, the N type thin film thermoelectric element 22 is laminated on the N type thin film thermoelectric element 12, and the P type thin film thermoelectric element 11 and the N type thin film thermoelectric element 12 are connected electrically. The lowermost substrate 1 and the intermediate layer substrate 2 have notches 10a, 20a, 30a for dividing the thermoelectric module 100 into multiple strip-like regions, and the thermoelectric conversion elements are formed, respectively, in the strip-like regions.SELECTED DRAWING: Figure 1 【課題】薄膜型の熱電モジュールの熱電性能を維持しつつ、バルク型の熱電モジュール並みの厚みを有するフレキシブルな熱電モジュールを提供する。【解決手段】熱電モジュール100は、P型薄膜熱電素子11およびN型薄膜熱電素子12を備える最下層基板1上に、P型薄膜熱電素子21およびN型薄膜熱電素子22を備える中間層基板2が積層して構成される。P型薄膜熱電素子11上にP型薄膜熱電素子21が積層し、N型薄膜熱電素子12上にN型薄膜熱電素子22が積層して、P型薄膜熱電素子11とN型薄膜熱電素子12とが電気的に接続されることで熱電変換素子が形成される。最下層基板1および中間層基板2のそれぞれは、熱電モジュール100を複数の短冊状領域に分ける切り欠き10a,20a,30aを有し、熱電変換素子は短冊状領域のそれぞれに形成される。【選択図】図1
Bibliography:Application Number: JP20190042768