SEMICONDUCTOR DEVICE
To accurately detect both IGBT temperature and freewheeling diode temperature.SOLUTION: A semiconductor device includes a semiconductor substrate, a first temperature sense diode, and a second temperature sense diode. The semiconductor substrate has an IGBT region and a free wheel diode region. The...
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| Format | Patent |
| Language | English Japanese |
| Published |
31.08.2020
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| Abstract | To accurately detect both IGBT temperature and freewheeling diode temperature.SOLUTION: A semiconductor device includes a semiconductor substrate, a first temperature sense diode, and a second temperature sense diode. The semiconductor substrate has an IGBT region and a free wheel diode region. The first temperature sense diode is arranged in the IGBT region. The second temperature sense diode is arranged in the free wheel diode region. With this configuration, the temperature of the IGBT region can be accurately detected by the first temperature sense diode, and the temperature of the free wheel diode region can be accurately detected by the second temperature sense diode.SELECTED DRAWING: Figure 1
【課題】 ＩＧＢＴの温度と還流ダイオードの温度の両方を正確に検出する。【解決手段】 半導体装置であって、半導体基板と、第１温度センスダイオードと、第２温度センスダイオード、を有する。前記半導体基板が、ＩＧＢＴ領域と還流ダイオード領域を有する。前記第１温度センスダイオードが、前記ＩＧＢＴ領域内に配置されている。前記第２温度センスダイオードが、前記還流ダイオード領域内に配置されている。この構成によれば、ＩＧＢＴ領域の温度を第１温度センスダイオードで正確に検出し、還流ダイオード領域の温度を第２温度センスダイオードで正確に検出することができる。【選択図】図１ |
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| AbstractList | To accurately detect both IGBT temperature and freewheeling diode temperature.SOLUTION: A semiconductor device includes a semiconductor substrate, a first temperature sense diode, and a second temperature sense diode. The semiconductor substrate has an IGBT region and a free wheel diode region. The first temperature sense diode is arranged in the IGBT region. The second temperature sense diode is arranged in the free wheel diode region. With this configuration, the temperature of the IGBT region can be accurately detected by the first temperature sense diode, and the temperature of the free wheel diode region can be accurately detected by the second temperature sense diode.SELECTED DRAWING: Figure 1
【課題】 ＩＧＢＴの温度と還流ダイオードの温度の両方を正確に検出する。【解決手段】 半導体装置であって、半導体基板と、第１温度センスダイオードと、第２温度センスダイオード、を有する。前記半導体基板が、ＩＧＢＴ領域と還流ダイオード領域を有する。前記第１温度センスダイオードが、前記ＩＧＢＴ領域内に配置されている。前記第２温度センスダイオードが、前記還流ダイオード領域内に配置されている。この構成によれば、ＩＧＢＴ領域の温度を第１温度センスダイオードで正確に検出し、還流ダイオード領域の温度を第２温度センスダイオードで正確に検出することができる。【選択図】図１ |
| Author | TSUZUKI HIROYUKI NARUSE YASUNORI EBINE JUMPEI |
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| Notes | Application Number: JP20190027242 |
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| RelatedCompanies | TOYOTA MOTOR CORP |
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| Snippet | To accurately detect both IGBT temperature and freewheeling diode temperature.SOLUTION: A semiconductor device includes a semiconductor substrate, a first... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE |
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