ETCHING SOLUTION FOR SILICON SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

To lower an etching rate of a silicon oxide film and improve an etching selectivity of a silicon nitride film relative to a silicon oxide film.SOLUTION: In an etching solution for a silicon substrate, the concentration of a silane compound (silicon) in the solution is adjusted to improve an etching...

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Bibliographic Details
Main Authors YOO HO SEONG, LEE JUN EUN, KIM MYUNG HYUN, JANG PYONG HWA
Format Patent
LanguageEnglish
Japanese
Published 06.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To lower an etching rate of a silicon oxide film and improve an etching selectivity of a silicon nitride film relative to a silicon oxide film.SOLUTION: In an etching solution for a silicon substrate, the concentration of a silane compound (silicon) in the solution is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the silane compound (silicon) nitride film.SELECTED DRAWING: None 【課題】シリコン酸化膜に対するエッチング速度を低くし、シリコン酸化膜対シリコン窒化膜に対するエッチング選択比を向上させる。【解決手段】シリコン基板エッチング溶液は、溶液中のシラン化合物（シリコン）の濃度を調節することにより、シラン化合物（シリコン）窒化膜をエッチングする際、シリコン酸化膜対シリコン窒化膜に対するエッチング選択比を向上させる。【選択図】なし
Bibliography:Application Number: JP20200002723