SEMICONDUCTOR DEVICE

• Main Author: YAMAZAKI SHUNPEI
• Format: Patent
• Language: English; Japanese
• Published: 27.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a production method of a semiconductor device which has good electric characteristics, and is hard to cause the variation in electric characteristic.SOLUTION: A semiconductor device production method comprises the steps of: forming a gate electrode 103 on a substrate 101; forming, on the gate electrode, a gate insulative film 104 and a first oxide semiconductor film; performing a heat treatment to form a second oxide semiconductor film after formation of the first oxide semiconductor film; forming a first conductive film; forming a first resist mask 119 having regions different in thickness; etching the second oxide semiconductor film and the first conductive film with the first resist mask to form a third oxide semiconductor film 120 and a second conductive film 121; forming a second resist mask 122a, 122b by contraction of the first resist mask; and selectively removing a part of the second conductive film with the second resist mask, thereby forming a source electrode and a drain electrode.SELECTED DRAWING: Figure 6 【課題】電気特性の変動が生じにくく、且つ、電気特性の良好な半導体装置の作製方法を提供する。【解決手段】半導体装置の作製方法は、基板１０１上にゲート電極１０３を形成し、ゲート電極上にゲート絶縁膜１０４及び第１の酸化物半導体膜を形成し、第１の酸化物半導体膜を形成した後、加熱処理をして第２の酸化物半導体膜を形成し、第１の導電膜を形成し、厚さの異なる領域を有する第１のレジストマスク１１９を形成し、第１のレジストマスクを用いて第２の酸化物半導体膜および第１の導電膜をエッチングして第３の酸化物半導体膜１２０および第２の導電膜を１２１形成し、第１のレジストマスクを縮小させて、第２のレジストマスク１２２ａ、１２２ｂを形成し、第２のレジストマスクを用いて第２の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成する。【選択図】図６