SEMICONDUCTOR DEVICE

To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the trans...

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Main Author YAMAZAKI SHUNPEI
Format Patent
LanguageEnglish
Japanese
Published 09.07.2020
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Abstract To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the transistor, and a third insulator on the second insulator. The second insulator has an opening which reaches the first insulator, and a fourth insulator is arranged in the opening, and hydrogen permeability of each of the first insulator, the third insulator, and the fourth insulator is lower than that of the second insulator.SELECTED DRAWING: Figure 1 【課題】安定した特性を有する素子を提供する。または、複数種の素子を有し、それぞれの素子が安定した特性を有する装置を提供する。【解決手段】第1の絶縁体と、第1の絶縁体上のトランジスタと、トランジスタ上の第2の絶縁体と、第2の絶縁体上の第3の絶縁体と、を有し、第2の絶縁体は、第1の絶縁体に達する開口部を有し、開口部には、第4の絶縁体が配置され、第1の絶縁体、第3の絶縁体および第4の絶縁体は、第2の絶縁体よりも水素透過性が低い半導体装置である。【選択図】図1
AbstractList To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the transistor, and a third insulator on the second insulator. The second insulator has an opening which reaches the first insulator, and a fourth insulator is arranged in the opening, and hydrogen permeability of each of the first insulator, the third insulator, and the fourth insulator is lower than that of the second insulator.SELECTED DRAWING: Figure 1 【課題】安定した特性を有する素子を提供する。または、複数種の素子を有し、それぞれの素子が安定した特性を有する装置を提供する。【解決手段】第1の絶縁体と、第1の絶縁体上のトランジスタと、トランジスタ上の第2の絶縁体と、第2の絶縁体上の第3の絶縁体と、を有し、第2の絶縁体は、第1の絶縁体に達する開口部を有し、開口部には、第4の絶縁体が配置され、第1の絶縁体、第3の絶縁体および第4の絶縁体は、第2の絶縁体よりも水素透過性が低い半導体装置である。【選択図】図1
Author YAMAZAKI SHUNPEI
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Snippet To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Title SEMICONDUCTOR DEVICE
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