SEMICONDUCTOR DEVICE
To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the trans...
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Format | Patent |
Language | English Japanese |
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09.07.2020
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Abstract | To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the transistor, and a third insulator on the second insulator. The second insulator has an opening which reaches the first insulator, and a fourth insulator is arranged in the opening, and hydrogen permeability of each of the first insulator, the third insulator, and the fourth insulator is lower than that of the second insulator.SELECTED DRAWING: Figure 1
【課題】安定した特性を有する素子を提供する。または、複数種の素子を有し、それぞれの素子が安定した特性を有する装置を提供する。【解決手段】第1の絶縁体と、第1の絶縁体上のトランジスタと、トランジスタ上の第2の絶縁体と、第2の絶縁体上の第3の絶縁体と、を有し、第2の絶縁体は、第1の絶縁体に達する開口部を有し、開口部には、第4の絶縁体が配置され、第1の絶縁体、第3の絶縁体および第4の絶縁体は、第2の絶縁体よりも水素透過性が低い半導体装置である。【選択図】図1 |
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AbstractList | To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable characteristics.SOLUTION: A semiconductor device comprises a first insulator, a transistor on the first insulator, a second insulator on the transistor, and a third insulator on the second insulator. The second insulator has an opening which reaches the first insulator, and a fourth insulator is arranged in the opening, and hydrogen permeability of each of the first insulator, the third insulator, and the fourth insulator is lower than that of the second insulator.SELECTED DRAWING: Figure 1
【課題】安定した特性を有する素子を提供する。または、複数種の素子を有し、それぞれの素子が安定した特性を有する装置を提供する。【解決手段】第1の絶縁体と、第1の絶縁体上のトランジスタと、トランジスタ上の第2の絶縁体と、第2の絶縁体上の第3の絶縁体と、を有し、第2の絶縁体は、第1の絶縁体に達する開口部を有し、開口部には、第4の絶縁体が配置され、第1の絶縁体、第3の絶縁体および第4の絶縁体は、第2の絶縁体よりも水素透過性が低い半導体装置である。【選択図】図1 |
Author | YAMAZAKI SHUNPEI |
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DocumentTitleAlternate | 半導体装置 |
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PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | SEMICONDUCTOR ENERGY LAB CO LTD |
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Snippet | To provide an element having stable characteristics; and provide a device which has a plurality of types of elements and in which each element has stable... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
Title | SEMICONDUCTOR DEVICE |
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