BIPOLAR TRANSISTOR
To provide a bipolar transistor which is suitable for reducing a base resistance and an inter-base corrector junction capacitance, and can improve performance improvement in a high frequency region.SOLUTION: An emitter mesa and a base electrode are arranged on a base mesa on a substrate. A base wiri...
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02.07.2020
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Abstract | To provide a bipolar transistor which is suitable for reducing a base resistance and an inter-base corrector junction capacitance, and can improve performance improvement in a high frequency region.SOLUTION: An emitter mesa and a base electrode are arranged on a base mesa on a substrate. A base wiring on the base electrode is connected to the base electrode via a vase opening. The emitter mesa contains a plurality of emitter fingers each having a long flat shape in one direction. Each emitter finger contains first and second emitter fingers, the base opening is arranged in a longitudinal direction from one end part of the first emitter finger at intervals, and is not arranged in a region where the second emitter finger is extended in the longitudinal direction. The end part on the base opening side of the second emitter finger is projected in the longitudinal direction from the end part of the base opening side of the first emitter finger.SELECTED DRAWING: Figure 1
【課題】ベース抵抗及びベースコレクタ間接合容量を低減させるのに適し、高周波領域における性能改善を図ることが可能なバイポーラトランジスタを提供する。【解決手段】基板上のベースメサの上にエミッタメサ及びベース電極が配置されている。ベース電極の上のベース配線が、ベース開口を通ってベース電極に接続されている。エミッタメサは、一方向に長い平面形状を持つ複数のエミッタフィンガーを含む。エミッタフィンガーは、第1、第2エミッタフィンガーを含み、ベース開口は、第1エミッタフィンガーの一方の端部から長手方向に間隔を隔てて配置されており、第2エミッタフィンガーを長手方向に延長した領域には配置されていない。第2エミッタフィンガーのベース開口側の端部は第1エミッタフィンガーのベース開口側の端部より長手方向に向かって突出している。【選択図】図1 |
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AbstractList | To provide a bipolar transistor which is suitable for reducing a base resistance and an inter-base corrector junction capacitance, and can improve performance improvement in a high frequency region.SOLUTION: An emitter mesa and a base electrode are arranged on a base mesa on a substrate. A base wiring on the base electrode is connected to the base electrode via a vase opening. The emitter mesa contains a plurality of emitter fingers each having a long flat shape in one direction. Each emitter finger contains first and second emitter fingers, the base opening is arranged in a longitudinal direction from one end part of the first emitter finger at intervals, and is not arranged in a region where the second emitter finger is extended in the longitudinal direction. The end part on the base opening side of the second emitter finger is projected in the longitudinal direction from the end part of the base opening side of the first emitter finger.SELECTED DRAWING: Figure 1
【課題】ベース抵抗及びベースコレクタ間接合容量を低減させるのに適し、高周波領域における性能改善を図ることが可能なバイポーラトランジスタを提供する。【解決手段】基板上のベースメサの上にエミッタメサ及びベース電極が配置されている。ベース電極の上のベース配線が、ベース開口を通ってベース電極に接続されている。エミッタメサは、一方向に長い平面形状を持つ複数のエミッタフィンガーを含む。エミッタフィンガーは、第1、第2エミッタフィンガーを含み、ベース開口は、第1エミッタフィンガーの一方の端部から長手方向に間隔を隔てて配置されており、第2エミッタフィンガーを長手方向に延長した領域には配置されていない。第2エミッタフィンガーのベース開口側の端部は第1エミッタフィンガーのベース開口側の端部より長手方向に向かって突出している。【選択図】図1 |
Author | TAKAHASHI SHINNOSUKE |
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RelatedCompanies | MURATA MFG CO LTD |
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Snippet | To provide a bipolar transistor which is suitable for reducing a base resistance and an inter-base corrector junction capacitance, and can improve performance... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | BIPOLAR TRANSISTOR |
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