ETCHANT, METHOD OF TREATING TREATMENT TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
To provide an etchant having an improved etching rate to ruthenium, and a method of treating a treatment target and a method for producing a semiconductor element using the etchant.SOLUTION: An etchant for etching ruthenium contains ortho periodic acid, and ammonia, and has a pH of 3 or more. There...
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Language | English Japanese |
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25.06.2020
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Abstract | To provide an etchant having an improved etching rate to ruthenium, and a method of treating a treatment target and a method for producing a semiconductor element using the etchant.SOLUTION: An etchant for etching ruthenium contains ortho periodic acid, and ammonia, and has a pH of 3 or more. There are also provided a method of treating a treatment target comprising a step of etching a treatment target containing ruthenium by using the etchant, and a method for producing a semiconductor element.SELECTED DRAWING: None
【課題】ルテニウムに対するエッチングレートが向上したエッチング液、並びに前記エッチング液を用いた被処理体の処理方法及び半導体素子の製造方法を提供する。【解決手段】オルト過ヨウ素酸と、アンモニアと、を含み、pHが3以上である、ルテニウムをエッチング処理するためのエッチング液。また、前記エッチング液を用いて、ルテニウムを含む被処理体をエッチング処理する工程を含む、被処理体の処理方法、並びに半導体素子の製造方法。【選択図】なし |
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AbstractList | To provide an etchant having an improved etching rate to ruthenium, and a method of treating a treatment target and a method for producing a semiconductor element using the etchant.SOLUTION: An etchant for etching ruthenium contains ortho periodic acid, and ammonia, and has a pH of 3 or more. There are also provided a method of treating a treatment target comprising a step of etching a treatment target containing ruthenium by using the etchant, and a method for producing a semiconductor element.SELECTED DRAWING: None
【課題】ルテニウムに対するエッチングレートが向上したエッチング液、並びに前記エッチング液を用いた被処理体の処理方法及び半導体素子の製造方法を提供する。【解決手段】オルト過ヨウ素酸と、アンモニアと、を含み、pHが3以上である、ルテニウムをエッチング処理するためのエッチング液。また、前記エッチング液を用いて、ルテニウムを含む被処理体をエッチング処理する工程を含む、被処理体の処理方法、並びに半導体素子の製造方法。【選択図】なし |
Author | OHASHI TAKUYA WADA YUKIHISA SUGAWARA MAI |
Author_xml | – fullname: WADA YUKIHISA – fullname: OHASHI TAKUYA – fullname: SUGAWARA MAI |
BookMark | eNrjYmDJy89L5WSIcQ1x9nD0C9FR8HUN8fB3UfB3UwgJcnUM8fRzhzB8Xf1CFEIcg9xdgYoc_VxgCt38gxQCgvxdQp1BSoNdfT2d_f2AvBCguKuPK0gbDwNrWmJOcSovlOZmUHID2aebWpAfn1pckJicmpdaEu8VYGRgZGBgaW5uZupoTJQiAEyDNH4 |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | エッチング液、被処理体の処理方法、及び半導体素子の製造方法 |
ExternalDocumentID | JP2020097765A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2020097765A3 |
IEDL.DBID | EVB |
IngestDate | Fri Sep 06 06:14:21 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2020097765A3 |
Notes | Application Number: JP20180236259 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&CC=JP&NR=2020097765A |
ParticipantIDs | epo_espacenet_JP2020097765A |
PublicationCentury | 2000 |
PublicationDate | 20200625 |
PublicationDateYYYYMMDD | 2020-06-25 |
PublicationDate_xml | – month: 06 year: 2020 text: 20200625 day: 25 |
PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | TOKYO OHKA KOGYO CO LTD |
RelatedCompanies_xml | – name: TOKYO OHKA KOGYO CO LTD |
Score | 3.3833888 |
Snippet | To provide an etchant having an improved etching rate to ruthenium, and a method of treating a treatment target and a method for producing a semiconductor... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
Title | ETCHANT, METHOD OF TREATING TREATMENT TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200625&DB=EPODOC&locale=&CC=JP&NR=2020097765A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFPVNp6JOpYj0yeKsy0YehnRNujpcW2omexBG2mWgQjdcxX_fS9fpnvZ2uRxHcnC5u3z8AnAjaUu26SS1FJ1Kq4lBwqJU3VsTJaVUJJHTJdpn0PKHzf6IjCrwuXoLU-CE_hTgiOhRKfp7XqzX8_9NLFbcrVzcJe_Imj16osPMsjrW9bFNTNbt8ChkoWu6bqcfmUG87MNcp0WcLdjWebQG2uevXf0sZb4eU7wD2IlQXZYfQuVD1mDPXX29VoPdQXnijWTpfIsjeOPC9Z1A3BoDLvyQGaFniJg74inoLQkNzG8IJ-5xFHICthLESs-I4pANXS36ok0fBtgSyOfPBZ7_MVx7Wr-Fwxz_GWXcj9am9HAC1WyWqVMwUkUmDQ0CL0nSJO0G-qNKKKYdDZpgMmafQX2DovONvXXY1y19U8omF1DNv77VJcbkPLkqbPkLqHaIMg |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUaPix2LMnlxEpCx9IGasGwOhW2YxPJCQDkqiJkBkxn_f6wDlibe2d7m0l1zvrr3-CnAnaU3adDyyFJ1Iq4pOwqJUPVpjJaVUJJGTJdonrwW9artP-jn4XL-FyXBCfzJwRLSoEdp7mu3X8_9DLJbVVi4eknccmj37os7MVXas8-MKMVmj7kUhC13TdevtyOTxkoaxTo04O7Bra3heHTu9NfSzlPmmT_EPYS9CcdP0CHIfsggFd_31WhH2u6sbb2yujG9xDANPuIHDxb3R9UQQMiP0DRF7jmjx5rKhgfkN4cRND5kcztaMmOkZURyynqtZX7XqQ449geNeJ8PzP4FbX8u3cJrDP6UM29HGkp5OIT-dTdUZGCNFxmUNAi9JUiV2Ge1RJRTDjjJNMBirnENpi6CLrdQbKASi2xl2WvylBAeaoqumKuQS8unXt7pC_5wm15lefwEwJIsf |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=ETCHANT%2C+METHOD+OF+TREATING+TREATMENT+TARGET%2C+AND+METHOD+FOR+PRODUCING+SEMICONDUCTOR+ELEMENT&rft.inventor=WADA+YUKIHISA&rft.inventor=OHASHI+TAKUYA&rft.inventor=SUGAWARA+MAI&rft.date=2020-06-25&rft.externalDBID=A&rft.externalDocID=JP2020097765A |