ETCHANT, METHOD OF TREATING TREATMENT TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

• Main Authors: WADA YUKIHISA, OHASHI TAKUYA, SUGAWARA MAI
• Format: Patent
• Language: English; Japanese
• Published: 25.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

To provide an etchant having an improved etching rate to ruthenium, and a method of treating a treatment target and a method for producing a semiconductor element using the etchant.SOLUTION: An etchant for etching ruthenium contains ortho periodic acid, and ammonia, and has a pH of 3 or more. There are also provided a method of treating a treatment target comprising a step of etching a treatment target containing ruthenium by using the etchant, and a method for producing a semiconductor element.SELECTED DRAWING: None 【課題】ルテニウムに対するエッチングレートが向上したエッチング液、並びに前記エッチング液を用いた被処理体の処理方法及び半導体素子の製造方法を提供する。【解決手段】オルト過ヨウ素酸と、アンモニアと、を含み、ｐＨが３以上である、ルテニウムをエッチング処理するためのエッチング液。また、前記エッチング液を用いて、ルテニウムを含む被処理体をエッチング処理する工程を含む、被処理体の処理方法、並びに半導体素子の製造方法。【選択図】なし