SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

• Main Authors: HINO SHIRO, SADAMATSU YASUSHI, KAWAHARA KOTARO, NAGAHISA YUICHI, HATTA HIDEYUKI
• Format: Patent
• Language: English; Japanese
• Published: 18.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To solve the problem that in an SiC-MOSFET with a built-in Schottky diode, there is a case where bipolar current is passed through a second well region formed at a terminal part to reduce breakdown voltage.SOLUTION: In an SiC-MOSFET with a built-in Schottky diode, a conductive layer in Schottky conn...