SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

• Main Authors: HINO SHIRO, SADAMATSU YASUSHI, KAWAHARA KOTARO, NAGAHISA YUICHI, HATTA HIDEYUKI
• Format: Patent
• Language: English; Japanese
• Published: 18.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To solve the problem that in an SiC-MOSFET with a built-in Schottky diode, there is a case where bipolar current is passed through a second well region formed at a terminal part to reduce breakdown voltage.SOLUTION: In an SiC-MOSFET with a built-in Schottky diode, a conductive layer in Schottky connection with a second well region is provided on the second well region formed in a terminal part, and the conductive layer is electrically connected with a source electrode of the MOSFET. A conductive layer contact hole is provided for connecting only the conductive layer and the source electrode.SELECTED DRAWING: Figure 2 【課題】ショットキダイオードを内蔵するＳｉＣ−ＭＯＳＦＥＴにおいて、終端部に形成される第２ウェル領域がバイポーラ通電して耐圧が低下する場合があった。【解決手段】ショットキダイオードを内蔵するＳｉＣ−ＭＯＳＦＥＴにおいて、終端部に形成される第２ウェル領域上に第２ウェル領域とショットキ接続する導電性層を設け、導電性層をＭＯＳＦＥＴのソース電極と電気的に接続させる。導電性層とソース電極とだけを接続させる導電性層コンタクトホールを設ける。【選択図】図２