SEMICONDUCTOR STORAGE DEVICE
To provide a semiconductor storage device capable of performing a writing operation with high speed.SOLUTION: The semiconductor memory device 20 includes: a conversion circuit 22a that stores data depending on the size of memory cell thresholds of a group GP that is a plurality of memory cell transi...
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| Main Authors | , , |
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| Format | Patent |
| Language | English Japanese |
| Published |
18.06.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | To provide a semiconductor storage device capable of performing a writing operation with high speed.SOLUTION: The semiconductor memory device 20 includes: a conversion circuit 22a that stores data depending on the size of memory cell thresholds of a group GP that is a plurality of memory cell transistors as a unit, and converts the input write data into permutation data related to the threshold order of the memory cells in the group GP; and a latch part that writes to the plurality of memory cells based on the permutation data.SELECTED DRAWING: Figure 5
【課題】高速に書き込み動作を行なうことが可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置２０は、複数のメモリセルトランジスタを単位とするグループＧＰ内のメモリセル閾値の大小関係でデータを記憶し、入力された書き込みデータを、グループＧＰ内のメモリセルの閾値の並び順に関する順列データへ変換するに変換する変換回路２２ａと、順列データに基づいて、複数のメモリセルに書き込みを行うラッチ部とを備える。【選択図】図５ |
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| AbstractList | To provide a semiconductor storage device capable of performing a writing operation with high speed.SOLUTION: The semiconductor memory device 20 includes: a conversion circuit 22a that stores data depending on the size of memory cell thresholds of a group GP that is a plurality of memory cell transistors as a unit, and converts the input write data into permutation data related to the threshold order of the memory cells in the group GP; and a latch part that writes to the plurality of memory cells based on the permutation data.SELECTED DRAWING: Figure 5
【課題】高速に書き込み動作を行なうことが可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置２０は、複数のメモリセルトランジスタを単位とするグループＧＰ内のメモリセル閾値の大小関係でデータを記憶し、入力された書き込みデータを、グループＧＰ内のメモリセルの閾値の並び順に関する順列データへ変換するに変換する変換回路２２ａと、順列データに基づいて、複数のメモリセルに書き込みを行うラッチ部とを備える。【選択図】図５ |
| Author | KUROSAWA TOMOKI FUNATSUKI RIEKO SASAKI TAKAHIKO |
| Author_xml | – fullname: SASAKI TAKAHIKO – fullname: FUNATSUKI RIEKO – fullname: KUROSAWA TOMOKI |
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| Snippet | To provide a semiconductor storage device capable of performing a writing operation with high speed.SOLUTION: The semiconductor memory device 20 includes: a... |
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| Title | SEMICONDUCTOR STORAGE DEVICE |
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