SEMICONDUCTOR DEVICE, SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: IIJIMA RYOSUKE, NISHIO JOJI, OTA CHIHARU
• Format: Patent
• Language: English; Japanese
• Published: 30.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device, a substrate, and a manufacturing method of the semiconductor device that can stabilize characteristics.SOLUTION: A semiconductor device according to an embodiment includes a substrate, and first and second semiconductor regions containing silicon carbide. The first and second semiconductor regions contain a first element containing at least one selected from the group consisting of N, P, and As. The first semiconductor region includes first and second intermediate regions. The first concentration of the first element in the first intermediate region is lower than the second concentration of the first element in the second intermediate region. The first intermediate region includes a first basal plane dislocation and a first threading edge dislocation connected to the first basal plane dislocation. The second intermediate region includes a second threading edge dislocation that is connected to the first threading edge dislocation.SELECTED DRAWING: Figure 1 【課題】特性を安定にできる半導体装置、基板、及び、半導体装置の製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、炭化珪素を含む、基体、第１、第２半導体領域を含む。第１、第２半導体領域は、Ｎ、Ｐ及びＡｓよりなる群から選択された少なくともいずれかを含む第１元素を含む。第１半導体領域は、第１、第２中間領域を含む。第１中間領域における第１元素の第１濃度は、第２中間領域における第１元素の第２濃度よりも低い。第１中間領域は、第１基底面転位と、第１基底面転位と繋がる第１貫通刃状転位と、を含む。第２中間領域は、第１貫通刃状転位と繋がる第２貫通刃状転位を含む。【選択図】図１