MICROWAVE PLASMA PROCESSING DEVICE
To provide a microwave plasma processing device capable of easily manufacturing a device capable of uniformly generating plasma even when displacement due to thermal expansion occurs.SOLUTION: Since a feeder line 41 and an antenna 42 are not physically in contact with each other, even when displacem...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
19.03.2020
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | To provide a microwave plasma processing device capable of easily manufacturing a device capable of uniformly generating plasma even when displacement due to thermal expansion occurs.SOLUTION: Since a feeder line 41 and an antenna 42 are not physically in contact with each other, even when displacement due to thermal expansion occurs, plasma can be generated uniformly. Since a semiconductor oscillator 2 is configured to be magnetically coupled to the antenna 42 via the feed line 41 only at the resonance frequency, there is no need to provide an elastic body, and the device can be easily manufactured. As a result, even when displacement due to thermal expansion occurs, a device capable of uniformly generating plasma can be easily manufactured.SELECTED DRAWING: Figure 1
【課題】熱膨張による変位が生じたとしても、プラズマの均一生成が可能な装置を容易に製作することができるマイクロ波プラズマ処理装置を提供することを目的とする。【解決手段】給電線41とアンテナ42とが物理的に非接触であるので、熱膨張による変位が生じたとしても、プラズマを均一に生成することができる。共振周波数のときのみ給電線41を介して半導体発振器2がアンテナ42に磁界結合されるように構成されているので、弾性体を設ける必要がなく装置を容易に製作することができる。その結果、熱膨張による変位が生じたとしても、プラズマの均一生成が可能な装置を容易に製作することができる。【選択図】図1 |
---|---|
AbstractList | To provide a microwave plasma processing device capable of easily manufacturing a device capable of uniformly generating plasma even when displacement due to thermal expansion occurs.SOLUTION: Since a feeder line 41 and an antenna 42 are not physically in contact with each other, even when displacement due to thermal expansion occurs, plasma can be generated uniformly. Since a semiconductor oscillator 2 is configured to be magnetically coupled to the antenna 42 via the feed line 41 only at the resonance frequency, there is no need to provide an elastic body, and the device can be easily manufactured. As a result, even when displacement due to thermal expansion occurs, a device capable of uniformly generating plasma can be easily manufactured.SELECTED DRAWING: Figure 1
【課題】熱膨張による変位が生じたとしても、プラズマの均一生成が可能な装置を容易に製作することができるマイクロ波プラズマ処理装置を提供することを目的とする。【解決手段】給電線41とアンテナ42とが物理的に非接触であるので、熱膨張による変位が生じたとしても、プラズマを均一に生成することができる。共振周波数のときのみ給電線41を介して半導体発振器2がアンテナ42に磁界結合されるように構成されているので、弾性体を設ける必要がなく装置を容易に製作することができる。その結果、熱膨張による変位が生じたとしても、プラズマの均一生成が可能な装置を容易に製作することができる。【選択図】図1 |
Author | KOTANI KAZUYA HONDA TAKESHI SAKAMOTO AKIRA |
Author_xml | – fullname: SAKAMOTO AKIRA – fullname: KOTANI KAZUYA – fullname: HONDA TAKESHI |
BookMark | eNrjYmDJy89L5WRQ8vV0DvIPdwxzVQjwcQz2dVQICPJ3dg0O9vRzV3BxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRgYGJsYGxgaOxkQpAgBkFiSP |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | マイクロ波プラズマ処理装置 |
ExternalDocumentID | JP2020043030A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2020043030A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:02:08 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2020043030A3 |
Notes | Application Number: JP20180171481 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200319&DB=EPODOC&CC=JP&NR=2020043030A |
ParticipantIDs | epo_espacenet_JP2020043030A |
PublicationCentury | 2000 |
PublicationDate | 20200319 |
PublicationDateYYYYMMDD | 2020-03-19 |
PublicationDate_xml | – month: 03 year: 2020 text: 20200319 day: 19 |
PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | NISSHIN:KK |
RelatedCompanies_xml | – name: NISSHIN:KK |
Score | 3.3843312 |
Snippet | To provide a microwave plasma processing device capable of easily manufacturing a device capable of uniformly generating plasma even when displacement due to... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | MICROWAVE PLASMA PROCESSING DEVICE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200319&DB=EPODOC&locale=&CC=JP&NR=2020043030A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSUxLSTQ2tkzUTTG0MNMFHX-ia2FskKqbYmKZmGyebAZsYoPGO3z9zDxCTbwiTCOYGLJhe2HA54SWgw9HBOaoZGB-LwGX1wWIQSwX8NrKYv2kTKBQvr1biK2LGrR3DFppBcyBLk62rgH-Lv7Oas7Otl4Ban5BEDkTYHlt4MjMwApqR4MO2ncNcwJtSylArlPcBBnYAoDG5ZUIMTBlJQozcDrDrl4TZuDwhc54A5nQzFcswqAEDLEg_3DHMFeFAB_HYF9HhYAgf2dQcejnruDiGubp7CrKoOTmGuLsoQu0LB7utXivACSHGYsxsAD7_KkSDAqW5qApx6Rk47S0JJO0tMSkFAtLkzST1LQUYBZLS06RZJDGY5AUXllpBi4QD7SQytBShoGlpKg0VRZYs5YkyYFDBAD0TXjC |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1JS8NAFH7UKtabVkWtSyiSW7AlMcshSDpJTGM2Yoy9hWwDKmixEf--b2KrPfU2zIPZ4Hv7ewNwndMqF0UtF6qxKgus_YmgiqNaqCQtL5VSRhWb-Tv8QHaeJHd2O-vA26oWpu0T-t02R0RElYj3puXX838nltnmVi5uihec-rizE93kl9Yxy7RCBJoT3YpCMyQ8Ibob8UH8S5OQX4-MLdhWWHtepjulE1aWMl-XKfY-7ES43HtzAJ3XvA89svp6rQ-7_jLijcMl-BaHMMQXi8NnI7W4yDMefYOL4pAwdhjcc6aVTol1BEPbSogj4GbZ39UyN1o7mHgMXbT56xPgNIWFHItSpLSQKM2LStUkKtW0QojRsjqFwYaFzjZSr6DnJL6XedPgYQB7jMKSqsbaOXSbz6_6AqVsU1y2r_MDwf57rw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=MICROWAVE+PLASMA+PROCESSING+DEVICE&rft.inventor=SAKAMOTO+AKIRA&rft.inventor=KOTANI+KAZUYA&rft.inventor=HONDA+TAKESHI&rft.date=2020-03-19&rft.externalDBID=A&rft.externalDocID=JP2020043030A |