DISPERSING ELEMENT FOR FORMING POROUS STRUCTURE, POROUS STRUCTURE, AND PHOTOELECTRIC CONVERSION ELEMENT
To provide a dispersing element for forming a porous structure that has a large specific surface area, can be applied with a common printing and application method, and prevents the generation of cracks in a film surface after deposition.SOLUTION: A dispersing element for forming a porous structure...
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Language | English Japanese |
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27.02.2020
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Abstract | To provide a dispersing element for forming a porous structure that has a large specific surface area, can be applied with a common printing and application method, and prevents the generation of cracks in a film surface after deposition.SOLUTION: A dispersing element for forming a porous structure contains metal oxide semiconductor fine particles, a solvent, and a viscoelasticity adjusting agent. The metal oxide semiconductor fine particles include at least particles having a size of primary particles of 1 nm or more and less than 10 nm in terms of the median diameter based on the volume. The viscoelasticity adjusting agent contains at least an oxycarboxylic acid. When the particles having a size of primary particles of 1 nm or more and less than 10 nm in terms of the median diameter based on the volume are first metal oxide semiconductor fine particles, the metal oxide semiconductor fine particles include second metal oxide semiconductor fine particles having a size of primary particles of 10 nm or more and less and 180 nm or less in terms of the median diameter based on the volume.SELECTED DRAWING: Figure 1
【課題】比表面積が大きく、一般的な印刷・塗布方法で塗布することができ、成膜後の膜表面にクラックが発生しない多孔質構造体形成用分散体を提供する。【解決手段】金属酸化物半導体微粒子と、溶媒と、粘弾性調整剤とを含み、前記金属酸化物半導体微粒子は、一次粒子の大きさが、体積基準のメジアン径で1nm以上10nm未満の粒子を少なくとも含み、前記粘弾性調整剤は、少なくともオキシカルボン酸を含み、前記金属酸化物半導体微粒子において、一次粒子の大きさが、体積基準のメジアン径で1nm以上10nm未満である粒子を第1の金属酸化物半導体微粒子としたとき、一次粒子の大きさが、体積基準のメジアン径で10nm以上180nm以下である第2の金属酸化物半導体微粒子を含むことを特徴とする多孔質構造体形成用分散体。【選択図】図1 |
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AbstractList | To provide a dispersing element for forming a porous structure that has a large specific surface area, can be applied with a common printing and application method, and prevents the generation of cracks in a film surface after deposition.SOLUTION: A dispersing element for forming a porous structure contains metal oxide semiconductor fine particles, a solvent, and a viscoelasticity adjusting agent. The metal oxide semiconductor fine particles include at least particles having a size of primary particles of 1 nm or more and less than 10 nm in terms of the median diameter based on the volume. The viscoelasticity adjusting agent contains at least an oxycarboxylic acid. When the particles having a size of primary particles of 1 nm or more and less than 10 nm in terms of the median diameter based on the volume are first metal oxide semiconductor fine particles, the metal oxide semiconductor fine particles include second metal oxide semiconductor fine particles having a size of primary particles of 10 nm or more and less and 180 nm or less in terms of the median diameter based on the volume.SELECTED DRAWING: Figure 1
【課題】比表面積が大きく、一般的な印刷・塗布方法で塗布することができ、成膜後の膜表面にクラックが発生しない多孔質構造体形成用分散体を提供する。【解決手段】金属酸化物半導体微粒子と、溶媒と、粘弾性調整剤とを含み、前記金属酸化物半導体微粒子は、一次粒子の大きさが、体積基準のメジアン径で1nm以上10nm未満の粒子を少なくとも含み、前記粘弾性調整剤は、少なくともオキシカルボン酸を含み、前記金属酸化物半導体微粒子において、一次粒子の大きさが、体積基準のメジアン径で1nm以上10nm未満である粒子を第1の金属酸化物半導体微粒子としたとき、一次粒子の大きさが、体積基準のメジアン径で10nm以上180nm以下である第2の金属酸化物半導体微粒子を含むことを特徴とする多孔質構造体形成用分散体。【選択図】図1 |
Author | SUZUKI SHIGEYO KANEI NAOMICHI TANAKA YUJI |
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DocumentTitleAlternate | 多孔質構造体形成用分散体、多孔質構造体及び光電変換素子 |
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Snippet | To provide a dispersing element for forming a porous structure that has a large specific surface area, can be applied with a common printing and application... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES |
Title | DISPERSING ELEMENT FOR FORMING POROUS STRUCTURE, POROUS STRUCTURE, AND PHOTOELECTRIC CONVERSION ELEMENT |
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