SiC SEMICONDUCTOR DEVICE

• Main Authors: NAKANO YUUKI, UENO MAYA, KUTSUMA YASUNORI, NAKAZAWA SEIYA, HARUYAMA SAWA, KAWAKAMI YASUHIRO
• Format: Patent
• Language: English; Japanese
• Published: 20.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an SiC semiconductor device that can reduce the influence of a modified line on an SiC semiconductor layer.SOLUTION: An SiC semiconductor device 1 includes an SiC semiconductor layer 2 including an SiC single crystal, and having a first main surface 3 as an element formation surface, a se...