SiC SEMICONDUCTOR DEVICE

• Main Authors: NAKANO YUUKI, UENO MAYA, KUTSUMA YASUNORI, NAKAZAWA SEIYA, HARUYAMA SAWA, KAWAKAMI YASUHIRO
• Format: Patent
• Language: English; Japanese
• Published: 20.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an SiC semiconductor device that can reduce the influence of a modified line on an SiC semiconductor layer.SOLUTION: An SiC semiconductor device 1 includes an SiC semiconductor layer 2 including an SiC single crystal, and having a first main surface 3 as an element formation surface, a second main surface 4 on the opposite side of the first main surface 3, and a plurality of side surfaces 5A to 5D connecting the first main surface 3 and the second main surface 4, and a plurality of modified lines 22A to 22D that are respectively formed on the side surface 5A to 5D of the SiC semiconductor layer 2 and extend in a strip shape along the tangential direction of the first main surface 3 of the SiC semiconductor layer 2 to have properties different from those of the SiC single crystal.SELECTED DRAWING: Figure 3 【課題】改質ラインに起因するＳｉＣ半導体層への影響を低減できるＳｉＣ半導体装置を提供する。【解決手段】ＳｉＣ半導体装置１は、ＳｉＣ単結晶を含み、素子形成面としての第１主面３、第１主面３の反対側の第２主面４ならびに第１主面３および第２主面４を接続する複数の側面５Ａ〜５Ｄを有するＳｉＣ半導体層２と、ＳｉＣ半導体層２の各側面５Ａ〜５Ｄに１層ずつ形成され、ＳｉＣ半導体層２の第１主面３の接線方向に沿って帯状にそれぞれ延び、ＳｉＣ単結晶とは異なる性質に改質された複数の改質ライン２２Ａ〜２２Ｄと、を含む。【選択図】図３