SEMICONDUCTOR STORAGE DEVICE

• Main Authors: HAMADA TATSUFUMI, KUKI TOMOHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a high quality semiconductor storage device.SOLUTION: A semiconductor storage device 1 comprises: a substrate 2; a semiconductor 22 above the substrate; a cell transistor 19 including a portion formed in the semiconductor; a first silicon nitride layer 51 provided above the cell transistor; and a second silicon nitride layer 52 provided on the first silicon nitride layer and having characteristics different from characteristics of the first silicon nitride layer.SELECTED DRAWING: Figure 1 【課題】高品質な半導体記憶装置を提供する。【解決手段】半導体記憶装置１は、基板２と、基板の上方の半導体２２と、半導体中に形成された部分を含んだセルトランジスタ１９と、セルトランジスタの上方に設けられた第１窒化シリコン層５１と、第１窒化シリコン層上に設けられ、第１窒化シリコン層の特性と異なる特性を有する第２窒化シリコン層５２と、を備える。【選択図】図１