SEMICONDUCTOR STORAGE DEVICE
To provide a high quality semiconductor storage device.SOLUTION: A semiconductor storage device 1 comprises: a substrate 2; a semiconductor 22 above the substrate; a cell transistor 19 including a portion formed in the semiconductor; a first silicon nitride layer 51 provided above the cell transisto...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
28.11.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a high quality semiconductor storage device.SOLUTION: A semiconductor storage device 1 comprises: a substrate 2; a semiconductor 22 above the substrate; a cell transistor 19 including a portion formed in the semiconductor; a first silicon nitride layer 51 provided above the cell transistor; and a second silicon nitride layer 52 provided on the first silicon nitride layer and having characteristics different from characteristics of the first silicon nitride layer.SELECTED DRAWING: Figure 1
【課題】高品質な半導体記憶装置を提供する。【解決手段】半導体記憶装置1は、基板2と、基板の上方の半導体22と、半導体中に形成された部分を含んだセルトランジスタ19と、セルトランジスタの上方に設けられた第1窒化シリコン層51と、第1窒化シリコン層上に設けられ、第1窒化シリコン層の特性と異なる特性を有する第2窒化シリコン層52と、を備える。【選択図】図1 |
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Bibliography: | Application Number: JP20180098529 |