SEMICONDUCTOR DEVICE

• Main Authors: KITAMURA MUTSUMI, SAKATA TOSHIAKI
• Format: Patent
• Language: English; Japanese
• Published: 31.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device having a super junction structure.SOLUTION: A semiconductor device having a super junction structure composed of first conductivity type columns and second conductivity type columns comprises: a first region of the super junction structure in which a PN ratio increases with the increasing distance from a first surface side toward a second surface side of the super junction structure; and a second region of the super junction structure which contacts the first region and adjacent to a channel region of the semiconductor device. A PN ratio in the second region is lower than a PN ratio of the first region on and end on the second surface side and a thickness of the second region is thinner than a thickness of the first region.SELECTED DRAWING: Figure 1 【課題】スーパージャンクション構造を有する半導体装置を提供する。【解決手段】第１導電型カラムと第２導電型カラムで構成されたスーパージャンクション構造を有する半導体装置において、スーパージャンクション構造の第１面側から第２面側に向けてＰＮ比が増加するスーパージャンクション構造の第１領域と、第１領域と接し、且つ、半導体装置のチャネル領域に隣接するスーパージャンクション構造の第２領域とを備え、第２領域におけるＰＮ比が、第１領域の第２面側の端部におけるＰＮ比よりも小さく、且つ、第２領域の厚さは、第１領域の厚さよりも薄い半導体装置を提供する。【選択図】図１