SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, SOLAR BATTERY ELEMENT AND SOLAR BATTERY

• Main Authors: SHIMIZU MARI, NOJIRI TAKESHI, HAYASAKA TAKESHI, KIZAWA KEIKO
• Format: Patent
• Language: English; Japanese
• Published: 10.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor substrate with passivation layer excellent in a passivation effect, and a solar battery element with passivation layer excellent in passivation effect and excellent in power generation performance and a solar battery.SOLUTION: The semiconductor substrate with passivation layer includes: a semiconductor substrate 1; a passivation layer 5 which is provided at least a part of at least one surface of the semiconductor substrate 1 and contains Bi; and a silicon nitride film formed on the passivation layer 5. An average thickness of all of the passivation layer 5 and the silicon nitride film is 10 nm to 1000 nm.SELECTED DRAWING: Figure 1 【課題】パッシベーション効果に優れるパッシベーション層を有するパッシベーション層付半導体基板、並びにパッシベーション効果に優れるパッシベーション層を有し、且つ、発電性能に優れる太陽電池素子及び太陽電池を提供する。【解決手段】パッシベーション層付半導体基板は、半導体基板１と、半導体基板１の少なくとも一方の面の少なくとも一部に設けられ、Ｂｉを含有するパッシベーション層５と、パッシベーション層５上に設けられる窒化ケイ素膜と、を有し、パッシベーション層５及び前記窒化ケイ素膜の合計の平均厚みが１０ｎｍ〜１０００ｎｍである。【選択図】図１