SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
To provide a semiconductor storage device having improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor storage device comprises a substrate, a laminate, and a columnar part. The columnar part has a semiconductor part provided in the laminate a...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
03.10.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | To provide a semiconductor storage device having improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor storage device comprises a substrate, a laminate, and a columnar part. The columnar part has a semiconductor part provided in the laminate and extending in a first direction, and has a plurality of widths whose magnitudes are different from each other in a second direction perpendicular to the first direction. The plurality of widths have: a first width that is a width of the columnar part located in the undermost first electrode film among a plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part; and a second width that is a width of the columnar part located in a second electrode film among the plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part. The first width is smaller than the second width.SELECTED DRAWING: Figure 1
【課題】電気特性が向上した半導体記憶装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体記憶装置は、基板と、積層体と、柱状部と、を備える。前記柱状部は、前記積層体内に設けられ、前記第1方向に延びる半導体部を有し、前記第1方向に垂直な第2方向に互いに大きさが異なる複数の幅を有する。前記複数の幅は、複数の電極膜の内の最下層の第1電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第1方向の位置において略同じ幅である第1の幅と、前記複数の電極膜の内の第2電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第1方向の位置において略同じ幅である第2の幅と、を有する。前記第1の幅は、前記第2の幅より小さい。【選択図】図1 |
---|---|
AbstractList | To provide a semiconductor storage device having improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor storage device comprises a substrate, a laminate, and a columnar part. The columnar part has a semiconductor part provided in the laminate and extending in a first direction, and has a plurality of widths whose magnitudes are different from each other in a second direction perpendicular to the first direction. The plurality of widths have: a first width that is a width of the columnar part located in the undermost first electrode film among a plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part; and a second width that is a width of the columnar part located in a second electrode film among the plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part. The first width is smaller than the second width.SELECTED DRAWING: Figure 1
【課題】電気特性が向上した半導体記憶装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体記憶装置は、基板と、積層体と、柱状部と、を備える。前記柱状部は、前記積層体内に設けられ、前記第1方向に延びる半導体部を有し、前記第1方向に垂直な第2方向に互いに大きさが異なる複数の幅を有する。前記複数の幅は、複数の電極膜の内の最下層の第1電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第1方向の位置において略同じ幅である第1の幅と、前記複数の電極膜の内の第2電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第1方向の位置において略同じ幅である第2の幅と、を有する。前記第1の幅は、前記第2の幅より小さい。【選択図】図1 |
Author | HARADA KAZUNORI HAGISHIMA DAISUKE KONNO TAKUYA |
Author_xml | – fullname: HAGISHIMA DAISUKE – fullname: HARADA KAZUNORI – fullname: KONNO TAKUYA |
BookMark | eNrjYmDJy89L5WRwDHb19XT293MJdQ7xD1IIBhKO7q4KLq5hns6uCo5-Lgq-riEe_i4K_m4Kvo5-oW6OziGhQZ5-7gohHq4KwY6-rjwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjA0NLQzNLU2NTRmChFAD-oLRQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 半導体記憶装置及びその製造方法 |
ExternalDocumentID | JP2019169535A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2019169535A3 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 16 05:53:05 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2019169535A3 |
Notes | Application Number: JP20180054600 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191003&DB=EPODOC&CC=JP&NR=2019169535A |
ParticipantIDs | epo_espacenet_JP2019169535A |
PublicationCentury | 2000 |
PublicationDate | 20191003 |
PublicationDateYYYYMMDD | 2019-10-03 |
PublicationDate_xml | – month: 10 year: 2019 text: 20191003 day: 03 |
PublicationDecade | 2010 |
PublicationYear | 2019 |
RelatedCompanies | TOSHIBA MEMORY CORP |
RelatedCompanies_xml | – name: TOSHIBA MEMORY CORP |
Score | 3.3277094 |
Snippet | To provide a semiconductor storage device having improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191003&DB=EPODOC&locale=&CC=JP&NR=2019169535A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFPVNp6JOJYj0rbjRD9eHIV2SWgf9YGvH3kabZaDCNlzFf99L3HRPewn5gJAcuVx-yd0vAA-WKKSHKMeUs9Ixbdt2zFK6ivfWmxZFW7pSk_pEsRvmdn_sjGvwsYmF0Tyh35ocETVKoL5Xer9e_l9iMe1buXos37Bq8RxkXWas0TGCD1ylBut1eZqwhBqUdvupEQ9-21zPsRx_D_bVOVoR7fNRT4WlLLdtSnACByl2N69OofZeNOCIbr5ea8BhtH7xxuxa-VZnuAMqmSUxy2mWDMgQE_-FE8ZHr5QTP2Yk4lmYMJIEJPLjPPBplitnB5KFnAz9iJ_DfcAzGpo4lsnfzCf9dGvc1gXU54u5vATypE4BaEjcKcIn0RZeWVqtQoiOJTy7U7auoLmjo-udrU04ViXtsGbdQL36_JK3aHir8k4L7Ac3k4Bk |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUaPiR2PM3hYh-4A9LGa0nQPZR2AjvJF11ERNgMiM_75tBeWJl6bpJc216fXu115_BXgwipw7AuXo_JVZummals64LXlvnVmet7jNFalPGNlBZvYn1qQCH5u3MIon9FuRIwqLKoS9l2q_Xv4fYhGVW7l6ZG-iafHkpy7R1uhYgA-xSjXSdWkSkxhrGLv9RIuGvzLbsQzL24P9tqTnlbHTuCufpSy3fYp_DAeJ6G5enkDlPa9DDW--XqvDYbi-8RbVtfGtTsUOKOcsjkiG03iIRqLwnikidNzDFHkRQSFNg5ig2EehF2W-h9NMJjugNKBo5IX0DO59muJAF7pM_0Y-7SdbehvnUJ0v5vwCUFtGAcKR2DMBn4pW4TBmNPOi6BiFY3ZY8xIaOzq62im9g1qQhoPpoBe9NOBISlTymnEN1fLzi98IJ1yyWzV5P2FFg1E |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+STORAGE+DEVICE+AND+METHOD+OF+MANUFACTURING+THE+SAME&rft.inventor=HAGISHIMA+DAISUKE&rft.inventor=HARADA+KAZUNORI&rft.inventor=KONNO+TAKUYA&rft.date=2019-10-03&rft.externalDBID=A&rft.externalDocID=JP2019169535A |