SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: HAGISHIMA DAISUKE, HARADA KAZUNORI, KONNO TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 03.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device having improved electric characteristics, and to provide a method of manufacturing the same.SOLUTION: A semiconductor storage device comprises a substrate, a laminate, and a columnar part. The columnar part has a semiconductor part provided in the laminate and extending in a first direction, and has a plurality of widths whose magnitudes are different from each other in a second direction perpendicular to the first direction. The plurality of widths have: a first width that is a width of the columnar part located in the undermost first electrode film among a plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part; and a second width that is a width of the columnar part located in a second electrode film among the plurality of electrode films, and that is substantially the same at a position in the first direction of the columnar part. The first width is smaller than the second width.SELECTED DRAWING: Figure 1 【課題】電気特性が向上した半導体記憶装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体記憶装置は、基板と、積層体と、柱状部と、を備える。前記柱状部は、前記積層体内に設けられ、前記第１方向に延びる半導体部を有し、前記第１方向に垂直な第２方向に互いに大きさが異なる複数の幅を有する。前記複数の幅は、複数の電極膜の内の最下層の第１電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第１方向の位置において略同じ幅である第１の幅と、前記複数の電極膜の内の第２電極膜内に位置する前記柱状部の幅であって、前記柱状部の前記第１方向の位置において略同じ幅である第２の幅と、を有する。前記第１の幅は、前記第２の幅より小さい。【選択図】図１