METHOD OF MANUFACTURING SPUTTERING TARGET
To provide a sputtering target in which a peak strength of a reflection wave at a target material/a solder layer boundary surface and a solder layer/a backing material boundary surface can be suppressed to a low level even if the solder layer is formed relatively thick, and defect of the solder laye...
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Format | Patent |
Language | English Japanese |
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26.09.2019
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Abstract | To provide a sputtering target in which a peak strength of a reflection wave at a target material/a solder layer boundary surface and a solder layer/a backing material boundary surface can be suppressed to a low level even if the solder layer is formed relatively thick, and defect of the solder layer can be highly accurately detected by ultrasonic flaw detection.SOLUTION: A sputtering target 10 is provided that has a solder layer 13 between a target material 11 and a backing material 12. An acoustic impedance of the solder layer 13 Z satisfies Z≥0.5×(X+Y)-27 where Xkg/(ms) denotes an acoustic impedance of the target material 11 and Ykg/(ms) denotes an acoustic impedance of the backing material 12. An average thickness of the solder layer 13 tis 0.75 mm or more and 2.0 mm or less. When σ denotes a standard deviation of a measurement at ten points of the solder layer 13, 3×σ is less than 0.2×t.SELECTED DRAWING: Figure 1
【課題】はんだ層が比較的厚く形成された場合であっても、ターゲット材/はんだ層界面、及び、はんだ層/バッキング材界面での反射波のピーク強度を低く抑えることができ、超音波探傷によって、はんだ層の欠陥を精度良く検出することが可能なスパッタリングターゲットを提供する。【解決手段】ターゲット材11とバッキング材12との間にはんだ層13を有するスパッタリングターゲット10であって、ターゲット材11の音響インピーダンスXkg/(m2・s)、バッキング材12の音響インピーダンスYkg/(m2・s)に対して、はんだ層13の音響インピーダンスZが、Z≧0.5×(X+Y)−27を満たすとされ、はんだ層13の平均厚さtaveが0.75mm以上2.0mm以下の範囲内とされ、はんだ層13の10箇所での測定値の標準偏差をσとするとき、3×σが0.2×tave以下の範囲内とされている。【選択図】図1 |
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AbstractList | To provide a sputtering target in which a peak strength of a reflection wave at a target material/a solder layer boundary surface and a solder layer/a backing material boundary surface can be suppressed to a low level even if the solder layer is formed relatively thick, and defect of the solder layer can be highly accurately detected by ultrasonic flaw detection.SOLUTION: A sputtering target 10 is provided that has a solder layer 13 between a target material 11 and a backing material 12. An acoustic impedance of the solder layer 13 Z satisfies Z≥0.5×(X+Y)-27 where Xkg/(ms) denotes an acoustic impedance of the target material 11 and Ykg/(ms) denotes an acoustic impedance of the backing material 12. An average thickness of the solder layer 13 tis 0.75 mm or more and 2.0 mm or less. When σ denotes a standard deviation of a measurement at ten points of the solder layer 13, 3×σ is less than 0.2×t.SELECTED DRAWING: Figure 1
【課題】はんだ層が比較的厚く形成された場合であっても、ターゲット材/はんだ層界面、及び、はんだ層/バッキング材界面での反射波のピーク強度を低く抑えることができ、超音波探傷によって、はんだ層の欠陥を精度良く検出することが可能なスパッタリングターゲットを提供する。【解決手段】ターゲット材11とバッキング材12との間にはんだ層13を有するスパッタリングターゲット10であって、ターゲット材11の音響インピーダンスXkg/(m2・s)、バッキング材12の音響インピーダンスYkg/(m2・s)に対して、はんだ層13の音響インピーダンスZが、Z≧0.5×(X+Y)−27を満たすとされ、はんだ層13の平均厚さtaveが0.75mm以上2.0mm以下の範囲内とされ、はんだ層13の10箇所での測定値の標準偏差をσとするとき、3×σが0.2×tave以下の範囲内とされている。【選択図】図1 |
Author | UEDA TOSHIAKI YOSHIDA YUUKI |
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DocumentTitleAlternate | スパッタリングターゲットの製造方法 |
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Snippet | To provide a sputtering target in which a peak strength of a reflection wave at a target material/a solder layer boundary surface and a solder layer/a backing... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | METHOD OF MANUFACTURING SPUTTERING TARGET |
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