SEMICONDUCTOR DEVICE, SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE

• Main Authors: KUSHIBE MITSUHIRO, NISHIO JOJI, SHIMIZU TATSUO
• Format: Patent
• Language: English; Japanese
• Published: 22.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of reducing defects, a substrate, a method for manufacturing the semiconductor device, and a method for manufacturing the substrate.SOLUTION: According to an embodiment, a semiconductor device comprises a first semiconductor region including a first chemical compound containing silicon and carbon, and a second semiconductor region including a second chemical compound containing silicon and carbon. The first semiconductor region includes first to third regions in contact with the second semiconductor region. The third region is located between the first region and the second region. The first region and the second region contain a first chemical element. The third region does not contain a first chemical element. Concentration of the first chemical element in the third region is lower than concentration of the first chemical element in the first region and concentration of the first chemical clement in the second region.SELECTED DRAWING: Figure 1 【課題】欠陥を少なくすることができる半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、シリコンと炭素とを含む第１化合物を含む第１半導体領域と、シリコンと炭素とを含む第２化合物を含む第２半導体領域と、を含む。前記第１半導体領域は、前記第２半導体領域と接する第１〜第３領域を含む。前記第３領域は、前記第１領域と前記第２領域との間に位置する。前記第１領域及び前記第２領域は第１元素を含む。前記第３領域は第１元素を含まない。または、前記第３領域における第１元素の濃度は、前記第１領域における第１元素の濃度よりも低く、前記第２領域における第１元素の濃度よりも低い。【選択図】図１