MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To form an n-type or p-type semiconductor region having high crystallinity, and suppress a decrease in crystallinity of a region outside the semiconductor region.SOLUTION: A manufacturing method of a semiconductor device includes a first step of ion-implanting an impurity into a silicon carbide subs...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
18.07.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | To form an n-type or p-type semiconductor region having high crystallinity, and suppress a decrease in crystallinity of a region outside the semiconductor region.SOLUTION: A manufacturing method of a semiconductor device includes a first step of ion-implanting an impurity into a silicon carbide substrate, a second step of ion-implanting at least one of silicon and carbon into an implantation range of the impurity in the silicon carbide substrate, and a step of annealing the silicon carbide substrate after performing the first step and the second step. The depth of the peak of the concentration of the impurity ion-implanted in the first step overlaps with the ion implantation depth of an element implanted in the second step.SELECTED DRAWING: Figure 4
【課題】 結晶性が高いn型またはp型の半導体領域を形成するとともに、その半導体領域の外部の領域の結晶性の低下を抑制する。【解決手段】 半導体装置の製造方法であって、炭化シリコン基板に不純物をイオン注入する第1工程と、前記炭化シリコン基板の前記不純物の注入範囲にシリコンと炭素の少なくとも一方をイオン注入する第2工程と、前記第1工程と前記第2工程を実施した後に前記炭化シリコン基板をアニールする工程を有する。前記第1工程でイオン注入された不純物の濃度のピークの深さと、前記第2工程で注入された元素のイオン注入深さが重複する。【選択図】図4 |
---|---|
AbstractList | To form an n-type or p-type semiconductor region having high crystallinity, and suppress a decrease in crystallinity of a region outside the semiconductor region.SOLUTION: A manufacturing method of a semiconductor device includes a first step of ion-implanting an impurity into a silicon carbide substrate, a second step of ion-implanting at least one of silicon and carbon into an implantation range of the impurity in the silicon carbide substrate, and a step of annealing the silicon carbide substrate after performing the first step and the second step. The depth of the peak of the concentration of the impurity ion-implanted in the first step overlaps with the ion implantation depth of an element implanted in the second step.SELECTED DRAWING: Figure 4
【課題】 結晶性が高いn型またはp型の半導体領域を形成するとともに、その半導体領域の外部の領域の結晶性の低下を抑制する。【解決手段】 半導体装置の製造方法であって、炭化シリコン基板に不純物をイオン注入する第1工程と、前記炭化シリコン基板の前記不純物の注入範囲にシリコンと炭素の少なくとも一方をイオン注入する第2工程と、前記第1工程と前記第2工程を実施した後に前記炭化シリコン基板をアニールする工程を有する。前記第1工程でイオン注入された不純物の濃度のピークの深さと、前記第2工程で注入された元素のイオン注入深さが重複する。【選択図】図4 |
Author | ARAUCHI TAKUJI SOEJIMA SHIGEMASA URAGAMI YASUSHI ITO TAKAHIRO |
Author_xml | – fullname: ARAUCHI TAKUJI – fullname: URAGAMI YASUSHI – fullname: ITO TAKAHIRO – fullname: SOEJIMA SHIGEMASA |
BookMark | eNrjYmDJy89L5WTQ8XX0C3VzdA4JDfL0c1fwdQ3x8HdR8HdTCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoaWhobmFuaGjsZEKQIA5jcniA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 半導体装置の製造方法 |
ExternalDocumentID | JP2019117871A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JP2019117871A3 |
IEDL.DBID | EVB |
IngestDate | Fri Sep 06 06:07:04 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JP2019117871A3 |
Notes | Application Number: JP20170251453 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190718&DB=EPODOC&CC=JP&NR=2019117871A |
ParticipantIDs | epo_espacenet_JP2019117871A |
PublicationCentury | 2000 |
PublicationDate | 20190718 |
PublicationDateYYYYMMDD | 2019-07-18 |
PublicationDate_xml | – month: 07 year: 2019 text: 20190718 day: 18 |
PublicationDecade | 2010 |
PublicationYear | 2019 |
RelatedCompanies | TOYOTA MOTOR CORP |
RelatedCompanies_xml | – name: TOYOTA MOTOR CORP |
Score | 3.3399973 |
Snippet | To form an n-type or p-type semiconductor region having high crystallinity, and suppress a decrease in crystallinity of a region outside the semiconductor... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190718&DB=EPODOC&locale=&CC=JP&NR=2019117871A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhT1DedynQqRaRPFtt9tg9DuqSlFtaW2Y69jSZNQQUdruLf9xI63dPekhxckiN3l7vcXQDuzW7Zla-ihjD5wOgPBTfsnsWRr4Rjl3mvtEoVbRENg6wfLgaLBrxvcmFUndAfVRwROYojv1dKXq_-nVhUxVauH9krDn0--emY6rV1jNoNZa1OJ2MviWlMdELGYaJHMwWzLDydlrsH-_IeLQvte_OJTEtZbesU_wQOEkT3UZ1C4y1vwRHZfL3WgsNp_eKNzZr51mfwMHWjzHdJmskIBm3qpUFMtdjXXiQt44hmJI1nGvXmz8Q7hzvfS0lg4LTLv00uw2Rrib0LaKL1L9qg5Tw3uVM4nKGyFwwtVlaI0Ugwu2DMHvBL6OxAdLUT2oFj2ZOuSsu-hmb19S1uUMdW7FbR5hfpS3wL |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhTnG86len8KCJ9srjus30osiUt3Vw_mO3Y22iyFFTQ4Sr-fS9h0z3tLeTgkhy5u9xnAO4bzbwpo6KGaPCO0e4KblgtkyNfCdvKs1Zu5irbIuz6aXs068xK8L6phVF9Qn9Uc0TkKI78Xih5vfx3YlGVW7l6ZK849fnkJQ7V19YxajeUtTodOG4c0YjohDijWA8nCmaaeDvN_h7s92R7Xvl2mg5kWcpyW6d4x3AQI7qP4gRKb1kVKmTz9VoVDoN1xBuHa-ZbncJD0A9Tr0-SVGYwaIGb-BHVIk97kbSMQpqSJJpo1J0OiXsGd56bEN_AZed_h5yP4q0tts6hjNa_qIGW8azB7YXNGSp7wdBiZQvR6wlmLRizOvwC6jsQXe6E3kLFT4LxfDwMn-twJCHSbWlaV1Auvr7FNerbgt0oOv0C3gJ--A |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=MANUFACTURING+METHOD+OF+SEMICONDUCTOR+DEVICE&rft.inventor=ARAUCHI+TAKUJI&rft.inventor=URAGAMI+YASUSHI&rft.inventor=ITO+TAKAHIRO&rft.inventor=SOEJIMA+SHIGEMASA&rft.date=2019-07-18&rft.externalDBID=A&rft.externalDocID=JP2019117871A |