SEMICONDUCTOR DEVICE

• Main Authors: OKUDA HAJIME, FUKUDA YOSHINORI
• Format: Patent
• Language: English; Japanese
• Published: 09.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of suppressing a crystal defect in a semiconductor layer.SOLUTION: A semiconductor device 1 includes a semiconductor layer 51 having an n-type MIS region 61 partitioned by a first trench 71, a first trench insulating layer 72 formed in the first trench 71, a first field insulating layer 76 formed on a first major surface 52 of the semiconductor layer 51 at a distance from the first trench 71 toward the inward portion of the n-type MIS region 61 and covering the n-type MIS region 61, and a first bridge insulating layer 79 formed in a region between the first trench 71 and the first field insulation layer 76 on the first major surface 52 of the semiconductor layer 51 and connected to the first trench insulation layer 72 and the first field insulation layer 76.SELECTED DRAWING: Figure 4 【課題】半導体層の結晶欠陥を抑制できる半導体装置を提供する。【解決手段】半導体装置１は、第１トレンチ７１によって区画されたｎ型ＭＩＳ領域６１を有する半導体層５１と、第１トレンチ７１内に形成された第１トレンチ絶縁層７２と、半導体層５１の第１主面５２において第１トレンチ７１からｎ型ＭＩＳ領域６１の内方部側に間隔を空けて形成され、ｎ型ＭＩＳ領域６１を被覆する第１フィールド絶縁層７６と、半導体層５１の第１主面５２において第１トレンチ７１および第１フィールド絶縁層７６の間の領域に形成され、第１トレンチ絶縁層７２および第１フィールド絶縁層７６に連結された第１ブリッジ絶縁層７９と、を含む。【選択図】図４