COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE WITH GROUP III NITRIDE CRYSTAL, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL

• Main Authors: UEMATSU KOJI, YOSHIZUMI YUSUKE, SATO KAZUNARI
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a composite substrate on which a group III nitride crystal having a small warp and no cracks is produced, a composite substrate with a group III nitride crystal, and a production method of a group III nitride crystal.SOLUTION: A composite substrate 10 includes a first substrate 11 and a s...