COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE WITH GROUP III NITRIDE CRYSTAL, AND PRODUCTION METHOD OF GROUP III NITRIDE CRYSTAL

• Main Authors: UEMATSU KOJI, YOSHIZUMI YUSUKE, SATO KAZUNARI
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a composite substrate on which a group III nitride crystal having a small warp and no cracks is produced, a composite substrate with a group III nitride crystal, and a production method of a group III nitride crystal.SOLUTION: A composite substrate 10 includes a first substrate 11 and a second substrate 12, which are bonded in each principal plane. The second substrate 12 has a linear thermal expansion coefficient lower than the linear thermal expansion coefficient of the first substrate 11. A composite substrate 20 with a group III nitride crystal includes the composite substrate 10 and a group III nitride crystal 21 arranged on the first substrate 11 of the composite substrate 10. A production method of the group III nitride crystal 21 includes a step for preparing the composite substrate 10 and a step for forming the group III nitride crystal 21 on the first crystal substrate 11 of the composite substrate 10.SELECTED DRAWING: Figure 2 【課題】割れを発生させることなく反りの小さいＩＩＩ族窒化物結晶を製造できる複合基板、ＩＩＩ族窒化物結晶付複合基板およびＩＩＩ族窒化物結晶の製造方法を提供する。【解決手段】複合基板１０は、第１基板１１と第２基板１２とを含み、第１基板１１と第２基板１２とはそれぞれの主面で接合され、第２基板１２の線熱膨張係数は、第１基板１１の線熱膨張係数に比べて低い。ＩＩＩ族窒化物結晶付複合基板２０は、複合基板１０と、複合基板１０の第１基板１１上に配置されたＩＩＩ族窒化物結晶２１とを含む。ＩＩＩ族窒化物結晶２１の製造方法は、複合基板１０を準備する工程と、複合基板１０の第１基板１１上にＩＩＩ族窒化物結晶２１を形成する工程とを含む。【選択図】図２