SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: AISO FUMIKI, IINO TOMOHISA, TAKAHASHI KENSEI
• Format: Patent
• Language: English; Japanese
• Published: 28.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a semiconductor manufacturing device capable of shortening the time of a deposition process according to an ALD system.SOLUTION: A semiconductor manufacturing device comprises a chamber 10, a process gas nozzle, an inert gas nozzle, and a hydrogen radical nozzle 14. At least one substrate can be accommodated in the chamber. The process gas nozzle emits a process gas towards the substrate inside of the chamber. The inert gas nozzle emits an inert gas towards the substrate inside of the chamber. The hydrogen radical nozzle is disposed within the chamber, generates a hydrogen radical 204 by heating a hydrogen containing raw material gas and emits the generated hydrogen radical towards the substrate during the emission of the inert gas. A metal wire is provided inside of the hydrogen radical nozzle, and the metal wire includes a metal catalyst which excites the generation of the hydrogen radical.SELECTED DRAWING: Figure 2 【課題】ＡＬＤ方式による成膜プロセスの時間を短縮することが可能な半導体製造装置を提供する。【解決手段】半導体製造装置は、チャンバー１０と、処理ガスノズルと、不活性ガスノズルと、水素ラジカルノズル１４と、を備える。チャンバーは、少なくとも１枚の基板を収容可能である。処理ガスノズルは、チャンバー内で基板に向けて処理ガスを放出する。不活性ガスノズルは、チャンバー内で基板に向けて不活性ガスを放出する。水素ラジカルノズルは、チャンバー内に配置され、水素を含んだ原料ガスを加熱して水素ラジカル２０４を生成し、生成した水素ラジカルを不活性ガスの放出中に基板に向けて放出する。水素ラジカルノズル内に金属線が設けられ、金属線は、水素ラジカルの生成を励起する金属触媒を含む。【選択図】図２