SEMICONDUCTOR DEVICE

To provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed.SOLUTION: A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 which have molded in a mold resin layer 40, and the semiconductor device 1 includes a resin layer 50 of which a...

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Main Authors AKEMICHI TAIKI, HOSHIYAMA MASAAKI, HOCCHI TOYOKAZU
Format Patent
LanguageEnglish
Japanese
Published 07.03.2019
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Abstract To provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed.SOLUTION: A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 which have molded in a mold resin layer 40, and the semiconductor device 1 includes a resin layer 50 of which a thickness different from that of the mold resin layer 40 is equal to 200 nm or less between the mold resin layer 40 to be hardened and the substrate 10. It is preferred that the resin layer 50 existing between the mold resin layer 40 and the substrate 10 exists in the length of 30% or more when all chip peripheral length is 100%.SELECTED DRAWING: Figure 1 【課題】 モールド樹脂と基板との間の剥離が抑制される半導体装置を提供することを目的とする。【解決手段】 モールド樹脂層40でモールドされた、半導体チップ20と基板10とを含む半導体装置1であって、硬化したモールド樹脂層40と基板10との間に、モールド樹脂層40と異なる厚さ200nm以下の樹脂層50を有することを特徴とする、半導体装置1である。モールド樹脂層40と基板10との間に存在する樹脂層50が、チップ全周辺の長さを100%としたとき、30%以上の周辺に存在すると、好ましい。【選択図】 図1
AbstractList To provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed.SOLUTION: A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 which have molded in a mold resin layer 40, and the semiconductor device 1 includes a resin layer 50 of which a thickness different from that of the mold resin layer 40 is equal to 200 nm or less between the mold resin layer 40 to be hardened and the substrate 10. It is preferred that the resin layer 50 existing between the mold resin layer 40 and the substrate 10 exists in the length of 30% or more when all chip peripheral length is 100%.SELECTED DRAWING: Figure 1 【課題】 モールド樹脂と基板との間の剥離が抑制される半導体装置を提供することを目的とする。【解決手段】 モールド樹脂層40でモールドされた、半導体チップ20と基板10とを含む半導体装置1であって、硬化したモールド樹脂層40と基板10との間に、モールド樹脂層40と異なる厚さ200nm以下の樹脂層50を有することを特徴とする、半導体装置1である。モールド樹脂層40と基板10との間に存在する樹脂層50が、チップ全周辺の長さを100%としたとき、30%以上の周辺に存在すると、好ましい。【選択図】 図1
Author HOSHIYAMA MASAAKI
HOCCHI TOYOKAZU
AKEMICHI TAIKI
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Snippet To provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed.SOLUTION: A semiconductor device 1 includes a...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE
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