SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: NAKASHIBA YASUTAKA, IIDA TETSUYA, KUWABARA SHINICHI
• Format: Patent
• Language: English; Japanese
• Published: 24.01.2019
• Subjects: DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To increase exhaust heat efficiency and heat resistance, and to achieve the miniaturization of a device in a silicon photonics device which supplies power to an optical waveguide by using a heater.SOLUTION: There is provided a modulator including: an optical waveguide CR1 formed on an insulation film BOX; an interlayer insulation film IL1 covering the optical waveguide CR1; a heater MH1 formed on the interlayer insulation film IL1; and an interlayer insulation film IL2 covering the heater MH1. A heat conduction part PG penetrating the interlayer insulation films IL1, IL2 is formed adjacently to the optical waveguide CR1 and the heater MH1.SELECTED DRAWING: Figure 3 【課題】光導波路に対しヒータを用いて給電するシリコンフォトニクス装置において、排熱効率および熱耐性を高め、装置の微細化を実現する。【解決手段】絶縁膜ＢＯＸ上に形成された光導波路ＣＲ１と、光導波路ＣＲ１を覆う層間絶縁膜ＩＬ１と、層間絶縁膜ＩＬ１上に形成されたヒータＭＨ１と、ヒータＭＨ１を覆う層間絶縁膜ＩＬ２を含む変調器において、光導波路ＣＲ１およびヒータＭＨ１と隣り合って層間絶縁膜ＩＬ１、ＩＬ２を貫通する熱伝導部ＰＧを形成する。【選択図】図３