PHOTODETECTOR

To provide a photodetector, in particular, a photodetector to be used in an optical communication system or an optical information processing system.SOLUTION: A photodetector comprises: a silicon substrate (101); a lower clad layer (102) that is formed on the silicon substrate; a silicon core layer...

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Bibliographic Details
Main Authors TAKAHASHI MASAYUKI, HONDA KENTARO, TAKEDA KOTARO, SAIDA TAKASHI
Format Patent
LanguageEnglish
Japanese
Published 06.12.2018
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Summary:To provide a photodetector, in particular, a photodetector to be used in an optical communication system or an optical information processing system.SOLUTION: A photodetector comprises: a silicon substrate (101); a lower clad layer (102) that is formed on the silicon substrate; a silicon core layer (110) that is formed on the lower clad layer; and a silicon waveguide (120) which is connected to the silicon core layer and guides a detection target light to the silicon core layer (110). At least two or more photodetector circuits each including a germanium layer (114) that is formed on the silicon core layer (110) are disposed in parallel with each other and serially to a light that is inputted from the silicon waveguide (120). The photodetector also comprises an amplifier that receives output signals from the photodetector circuits.SELECTED DRAWING: Figure 6 【課題】本発明は、光検出器に関し、特に、光通信システムや光情報処理システムにおいて用いられる光検出器に関する。【解決手段】本発明の光検出器は、シリコン基板(101)と、前記シリコン基板上に形成された下部クラッド層(102)と、前記下部クラッド層上に形成されたシリコンコア層(110)と、前記シリコンコア層に接続され、検出対象光を前記シリコンコア層(110)へ導波するシリコン導波路(120)と、を有し、前記シリコンコア層(110)上に形成されたゲルマニウム層(114)を持つ光検出器が、シリコン導波路(120)から入力される光に対して直列に並ぶように少なくとも二つ以上配置され、各光検出回路からの出力信号を受ける増幅器を有することを特徴とする光検出器である。【選択図】図6
Bibliography:Application Number: JP20170096678