ELECTROSTATIC ATTRACTION CHUCK AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: TERAKUBO YOSHIHIRO, MITSUI TAKAHIKO, YAMAMOTO EIICHI, ITO TOSHIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 22.11.2018
• Subjects: BASIC ELECTRIC ELEMENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; MACHINE TOOLS; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide an electrostatic attraction chuck which can restrain cracking of a semiconductor wafer by exfoliating the semiconductor wafer easily, and can aim for thinning of the semiconductor wafer by finishing with high accuracy, and to provide a manufacturing method of semiconductor wafer.SOLUTION: An electrostatic attraction chuck 1 for holding a semiconductor wafer 20 by electrostatic force has a substrate 2, a synthetic resin sheet 3 bonded to one principal surface of the substrate 2, and at least a pair of electrodes 4 disposed in the synthetic resin sheet 3, where a flattened ground surface 5 on which the semiconductor wafer 20 abuts, is formed on the surface of the synthetic resin sheet 3. With such an arrangement, the semiconductor wafer 20 can be attracted and held and can be exfoliated easily, while restraining breakdown at the time of exfoliation. Furthermore, since a flattened ground surface 5 is formed as the holding surface, thinning can be aimed for by finishing the thickness of the semiconductor wafer 20 uniformly.SELECTED DRAWING: Figure 1 【課題】半導体ウェーハの剥離が容易で半導体ウェーハの割れを抑制することができると共に、半導体ウェーハを高精度に仕上げて薄層化を図ることができる静電吸着チャック及びその製造方法並びに半導体装置の製造方法を提供する。【解決手段】静電力によって半導体ウェーハ２０を保持する静電吸着チャック１であって、基板２と、基板２の一主面に接合された合成樹脂シート３と、合成樹脂シート３の内部に配設された少なくとも一対の電極４と、を有し、合成樹脂シート３の表面には、半導体ウェーハ２０が当接する平坦化された研削面５が形成されている。これにより、半導体ウェーハ２０を吸着して保持することができると共に容易に剥離することができ、剥離時の破損を抑制することできる。また、保持面として平坦化された研削面５が形成されていることにより、半導体ウェーハ２０の厚みを均一的に仕上げて薄層化を図ることができる。【選択図】図１