SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

• Main Authors: KUME IPPEI, SHIMA SHINYA, NODA YUKI, TAKANO EIJI
• Format: Patent
• Language: English; Japanese
• Published: 11.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device which can collectively singulate a plurality of semiconductor wafers after lamination while preventing damages on the semiconductor wafers.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises the steps of: laminating a first semiconductor substrate having a first surface having a semiconductor element and a second surface opposite to the first surface and a second semiconductor substrate having a third surface having a semiconductor element and a fourth surface opposite to the third surface; etching the first semiconductor substrate from the second surface to form a first contact hole from the second surface to reach the first surface and form a first groove in a first region on the second surface of the first semiconductor substrate; forming a first mask material which covers the first groove; forming a first metal electrode in the first contact hole by using the first mask material as a mask; and removing the first mask material and subsequently cutting the first region of the first semiconductor region.SELECTED DRAWING: Figure 7 【課題】半導体ウェハの損傷を抑制しつつ、複数の半導体ウェハを積層後にまとめて個片化することができる半導体装置の製造方法および半導体装置を提供する。【解決手段】本実施形態による半導体装置の製造方法は、半導体素子を有する第１面と該第１面に対して反対側にある第２面とを有する第１半導体基板と、半導体素子を有する第３面と該第３面に対して反対側にある第４面とを有する第２半導体基板とを積層する。第１半導体基板の第２面からエッチングして該第２面から第１面に達する第１コンタクトホールを形成し、かつ、第１半導体基板の第２面のうち第１領域に第１溝を形成する。第１溝を被覆する第１マスク材を形成する。第１マスク材をマスクとして用いて第１コンタクトホール内に第１金属電極を形成する。第１マスク材の除去後、第１半導体基板の第１領域を切断する。【選択図】図７