Ag ALLOY SPUTTERING TARGET, AND Ag ALLOY FILM

• Main Author: TOSHIMORI YUTO
• Format: Patent
• Language: English; Japanese
• Published: 28.06.2018
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CALCULATING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPUTING; COUNTING; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; TREATMENT OF ALLOYS OR NON-FERROUS METALS

PROBLEM TO BE SOLVED: To provide an Ag alloy film low in an electrical resistivity, excellent in optical characteristics, and excellent in various durabilities such as moisture resistance, heat resistance, sulfur resistance, and salt water resistance, and an Ag alloy sputtering target capable of depositing the Ag alloy film by a sputter method, and capable of suppressing an abnormal discharge at a deposition time.SOLUTION: An Ag alloy film contains: an element of one kind or two kinds selected from Pd, Pt and Au within 1.5 to 10.0 atom %; one or both Zn and Sn by 0.1 atom % to 3.0 atom % in total; Mg within a range of 0.05 to 0.20 atom %, the remainder being an Ag alloy film made of Ag and an inevitable impurity, and an Ag alloy sputtering target.SELECTED DRAWING: None 【課題】電気抵抗が低く、光学特性に優れ、耐湿性、耐熱性、耐硫化性、耐塩水性などの各種の耐久性に優れるＡｇ合金膜、およびこのＡｇ合金膜をスパッタ法によって成膜でき、成膜時の異常放電の発生を抑制することができるＡｇ合金スパッタリングターゲットの提供。【解決手段】Ｐｄ、Ｐｔ及びＡｕから選択される１種又は２種以上の元素を合計で１．５〜１０．０原子％の範囲で含有し、Ｚｎ及びＳｎのいずれか一方または両方を合計で０．１原子％以上３．０原子％以下の範囲で含有し、更にＭｇを０．０５〜０．２０原子％の範囲で含有し、残部がＡｇと不可避不純物からなるＡｇ合金膜及びＡｇ合金スパッタリングターゲット。【選択図】なし