OBJECT PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: OKITA KENZO, MARUYAMA YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 14.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

PROBLEM TO BE SOLVED: To provide an object processing method that can suppress occurrence of high heat due to laser irradiation in a separation layer in a method in which a target processing and movement are performed in a state in which an object is temporarily fixed on a support body.SOLUTION: An object processing method includes a step (1) of forming a laminate having a support, a separation layer modified by absorbing laser light, and an object to be processed in this order, a step (2) of processing the object and/or moving the laminate, a step (3) of irradiating the separation layer with pulsed laser light having a wavelength of 400 nm or less and a pulse width of 1 nanosecond or less from the side of the support body, and a step (4) of separating the support body and the object from each other.SELECTED DRAWING: None 【課題】支持体上に対象物を仮固定した状態で加工・移動処理を行う方法において、分離層におけるレーザー照射による高熱の発生を抑制することができる対象物の処理方法を提供する。【解決手段】（１）支持体と、レーザー光を吸収することにより変質する分離層と、処理対象物とをこの順に有する積層体を形成する工程；（２）前記対象物を加工し、および／または前記積層体を移動する工程；（３）前記支持体側から、前記分離層に、波長４００ｎｍ以下でパルス幅１ナノ秒以下のパルスレーザー光を照射する工程；ならびに（４）前記支持体と前記対象物とを分離する工程；を有する、対象物の処理方法。【選択図】なし