GaN SINGLE CRYSTAL AND WAFER

• Main Authors: KAMATA KAZUNORI, KAWABATA SHINICHIRO, MIKAWA YUTAKA, NAGAOKA HIROFUMI, FUJISAWA HIDEO, KOJIMA ATSUHIKO
• Format: Patent
• Language: English; Japanese
• Published: 12.04.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To produce a nitride single crystal having low resistance and high mobility by a simple method, even when the crystal is grown by an ammonothermal method.SOLUTION: A nitride single crystal formed by growing the crystal in the presence of a solvent containing nitrogen in a supercritical state and/or in a subcritical state is annealed at 750°C or higher for 5.5 hours or longer.SELECTED DRAWING: None 【課題】アモノサーマル法で結晶成長した場合であっても、低抵抗で移動度が高い窒化物単結晶を簡便な方法で製造できるようにすること。【解決手段】超臨界状態及び／又は亜臨界状態の窒素を含有する溶媒の存在下で結晶成長した窒化物単結晶を７５０℃以上で５．５時間以上アニール処理する。【選択図】なし