FIELD-EFFECT TRANSISTOR

• Main Author: TANIMOTO SHINJI
• Format: Patent
• Language: English; Japanese
• Published: 05.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a field-effect transistor which is hard to cause the disconnection of a leading end portion of a gate electrode, and which enables high-density layout of electrodes.SOLUTION: A field-effect transistor comprises: a nitride semiconductor laminate 11 including an active region where a channel is formed; a source electrode 21 including a plurality of source branch parts 21a disposed on an upper face side of the nitride semiconductor laminate 11; a drain electrode 22 including a plurality of drain branch parts 22a disposed on the upper face side of the nitride semiconductor laminate 11 so as to alternate with the source branch parts 21a; and a gate electrode 23 disposed between the source electrode 21 and the drain electrode 22 on the upper face side of the nitride semiconductor laminate 11, and having a side face portion extending along a side face of the plurality of source branch parts 21a and a leading end portion continuously extending from the side face portion, and fronting on a leading end of the plurality of source branch parts 21a. The gate length of the leading end portion between the leading end of the plurality of source branch parts 21a and the drain electrode 22 is larger than the gate length of the side face portion.SELECTED DRAWING: Figure 1 【課題】ゲート電極の先端部分が途切れにくく、且つ、各電極を高密度に配置可能な電界効果トランジスタを提供する。【解決手段】チャネルが形成される活性領域を含む窒化物半導体積層体１１と、窒化物半導体積層体１１の上面側に配置された複数のソース枝部２１ａを含むソース電極２１と、窒化物半導体積層体１１の上面側においてソース枝部２１ａと互い違いに配置された複数のドレイン枝部２２ａを含むドレイン電極２２と、窒化物半導体積層体１１の上面側においてソース電極２１とドレイン電極２２との間に配置され、ソース枝部２１ａの側面に沿って延伸する側面部分と、側面部分から連続し、ソース枝部２１ａの先端に面する先端部分と、を有するゲート電極２３と、を備える電界効果トランジスタであって、ソース枝部２１ａの先端とドレイン電極２２との間における先端部分のゲート長は、側面部分のゲート長よりも大きい。【選択図】図１