SEMICONDUCTOR DEVICE

• Main Author: TAMAKI TOMOHIRO
• Format: Patent
• Language: English; Japanese
• Published: 29.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device by which a parasitic transistor is less likely to operate.SOLUTION: A semiconductor device according to an embodiment comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, a first electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, a gate electrode, a sixth semiconductor region of the second conductivity type, a second electrode, and a third electrode. The second semiconductor region and the third semiconductor region are provided under the first semiconductor region. A carrier concentration of the second conductivity type, of the third semiconductor region is lower than that of the second semiconductor region. The gate electrode faces the fourth semiconductor region. The sixth semiconductor region is provided on the first semiconductor region, and located above the third semiconductor region. The second electrode faces the sixth semiconductor region via a first insulating layer. The third electrode is electrically connected with the second electrode.SELECTED DRAWING: Figure 2 【課題】寄生トランジスタが動作し難い半導体装置を提供する。【解決手段】実施形態に係る半導体装置は、第１導電形の第１半導体領域、第２導電形の第２半導体領域、第２導電形の第３半導体領域、第１電極、第２導電形の第４半導体領域、第１導電形の第５半導体領域、ゲート電極、第２導電形の第６半導体領域、第２電極、および第３電極を有する。第２半導体領域および第３半導体領域は、第１半導体領域の下に設けられている。第３半導体領域の第２導電形のキャリア濃度は、第２半導体領域の第２導電形のキャリア濃度よりも低い。ゲート電極は、第４半導体領域と対面している。第６半導体領域は、第１半導体領域の上に設けられ、第３半導体領域の上に位置している。第２電極は、第１絶縁層を介して第６半導体領域と対面している。第３電極は、第２電極と電気的に接続されている。【選択図】図２