SEMICONDUCTOR NANOPARTICLE AND MANUFACTURING METHOD THEREFOR

• Main Authors: UEMATSU TARO, TORIMOTO TSUKASA, KUWAHATA SUSUMU, OYAMATSU DAISUKE, KAMEYAMA TATSUYA, WAJIMA TOMOTAKA, NIKI KENTA
• Format: Patent
• Language: English; Japanese
• Published: 22.03.2018
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a semiconductor nanoparticle having a constitution providing a band edge light emission from ternary system or quaternary system quantum dots obtained as a low toxicity component and a manufacturing method therefor.SOLUTION: There is provided a semiconductor nanoparticle having a core and a shell covering a surface of the core, large in band gap energy and hetero jointed with the core, and emitting when light is irradiated, the core is a semiconductor containing M, Mand Z, Mis at least one kind of element selected from a group consisting of Ag, Cu and Au, Mis at least one kind of element selected from a group consisting of Al, Ga, In and Tl, Z is at least one kind of element selected from a group consisting of S, Se and Te, the shell is a semiconductor containing the XIII group elements and the XVI group elements.SELECTED DRAWING: None 【課題】低毒性の組成とし得る三元系ないし四元系の量子ドットからバンド端発光が得られる構成を備えた、半導体ナノ粒子及びその製造方法を提供する。【解決手段】コアと、コアの表面を覆いコアよりもバンドギャップエネルギーが大きくかつコアとヘテロ接合するシェルと、を備え、光が照射されると発光する半導体ナノ粒子であって、コアが、Ｍ１、Ｍ２、およびＺを含む半導体であって、Ｍ１が、Ａｇ、ＣｕおよびＡｕからなる群より選ばれる少なくとも一種の元素であり、Ｍ２が、Ａｌ、Ｇａ、ＩｎおよびＴｌからなる群より選ばれる少なくとも一種の元素であり、Ｚが、Ｓ、ＳｅおよびＴｅからなる群より選ばれる少なくとも一種の元素である半導体からなり、シェルが、第１３族元素および第１６族元素を含む半導体である半導体ナノ粒子である。【選択図】なし