PLASMA ETCHING METHOD

PROBLEM TO BE SOLVED: To suppress an aluminum-containing substance from being worn when plasma-etching a Ti/Al/Ti multilayer film using a chlorine-containing gas in a process chamber having the aluminum-containing substance on its inner face.SOLUTION: A plasma etching method comprises: a step of loa...

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Bibliographic Details
Main Authors YODA HISASHI, KOBE TAKASHI
Format Patent
LanguageEnglish
Japanese
Published 15.03.2018
Subjects
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