PLASMA ETCHING METHOD

• Main Authors: YODA HISASHI, KOBE TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 15.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To suppress an aluminum-containing substance from being worn when plasma-etching a Ti/Al/Ti multilayer film using a chlorine-containing gas in a process chamber having the aluminum-containing substance on its inner face.SOLUTION: A plasma etching method comprises: a step of loa...