PLASMA ETCHING METHOD

• Main Authors: YODA HISASHI, KOBE TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 15.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To suppress an aluminum-containing substance from being worn when plasma-etching a Ti/Al/Ti multilayer film using a chlorine-containing gas in a process chamber having the aluminum-containing substance on its inner face.SOLUTION: A plasma etching method comprises: a step of loading a substrate into a process chamber, provided that the process chamber has at least a part of its inner face, including an aluminum-containing substance, and the substrate has a Ti/Al/Ti multilayer film arranged by laminating a lower Ti film, an Al film and an upper Ti film, and has a patterned resist layer thereon; and an etching step of generating plasma of an etching gas including a chlorine-containing gas and a nitrogen gas, and plasma-etching the Ti/Al/Ti multilayer film by the resultant plasma, using the resist layer as a mask.SELECTED DRAWING: Figure 2 【課題】アルミニウム含有物を内面に有する処理容器内で、Ｔｉ／Ａｌ／Ｔｉ積層膜を塩素含有ガスを用いてプラズマエッチングする際に、アルミニウム含有物の消耗を抑制する。【解決手段】内面の少なくとも一部がアルミニウム含有物からなる処理容器内に、下層Ｔｉ膜、Ａｌ膜、および上層Ｔｉ膜を積層してなるＴｉ／Ａｌ／Ｔｉ積層膜を有し、その上にパターン化されたレジスト層が形成された基板を搬入する工程と、塩素含有ガスを含むエッチングガスおよび窒素ガスのプラズマを生成し、Ｔｉ／Ａｌ／Ｔｉ積層膜を、レジスト層をマスクとして、生成されたプラズマによりプラズマエッチングするエッチング工程とを含む。【選択図】図２