GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: KAWABATA SHINICHIRO, MIKAWA YUTAKA, NAMIDA HIDEO, MOCHIZUKI TAE, FUJISAWA HIDEO
• Format: Patent
• Language: English; Japanese
• Published: 15.02.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a new GaN single crystal having improved quality, and a method for manufacturing the same.SOLUTION: A circular C plane GaN wafer has a gallium polar surface 11 served as a main surface on one side and a nitrogen polar surface 12 served as a main surface on the opposite side. When at least a first line segment being a virtual line segment having a length of 40 mm is drawn on at least one of the main surfaces 11 and 12, (A1) the maximum value of FWHM of XRC among all measurement points is less than 40 arcsec when an X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of (002) reflection is measured at an interval of 0.2 mm, and (B1) a difference between the maximum value and minimum value of peak angles of the XRC among all measurement points is less than 0.2° when the X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of the (002) reflection is measured at an interval of 0.2 mm.SELECTED DRAWING: Figure 1 【課題】改善された品質を有する新規なＧａＮ単結晶及びその製造方法の提供。【解決手段】一方側の主表面であるガリウム極性面１１と反対側の主表面である窒素極性面１２とを有し、少なくともいずれかの主表面１１，１２上に、長さ４０ｍｍの仮想的な線分である第一線分を少なくともひとつ引いたときに、（Ａ１）第一線分上において、各ωスキャンの際のＸ線入射面を第一線分と平行にして（００２）反射のＸＲＣを０．２ｍｍ間隔で測定したとき、全測定点間でのＸＲＣのＦＷＨＭの最大値が４０ａｒｃｓｅｃ未満で、（Ｂ１）当該第一線分上において、各ωスキャンの際のＸ線入射面を当該第一線分と平行にして（００２）反射のＸＲＣを０．２ｍｍ間隔で測定したとき、全測定点間でのＸＲＣのピーク角度の最大値と最小値との差が０．２°未満であり、ガリウム極性面１１と窒素極性面１２を有する円形のＣ面ＧａＮウエハ。【選択図】図１