SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM

• Main Authors: MOTOZAWA ATSUSHI, OKUDA YUICHI
• Format: Patent
• Language: English; Japanese
• Published: 01.02.2018
• Subjects: CONTROLLING; PHYSICS; REGULATING; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

PROBLEM TO BE SOLVED: To provide a current generation circuit capable of generating highly accurate current.SOLUTION: According to one embodiment, a current generation circuit 10 comprises: bipolar transistors Q1 and Q2; a current distribution circuit 11 causing currents I1 and I2 according to voltage V2 to flow respectively through the bipolar transistors Q1 and Q2; a MOS transistor M1 provided between the bipolar transistor Q1 and the current distribution circuit 11, and having a gate to which voltage V1 is supplied; a MOS transistor M2 provided between the bipolar transistor Q2 and the current distribution circuit 11, and having a gate to which the voltage V1 is supplied; a resistive element R1 provided between the MOS transistor M2 and the bipolar transistor Q2; an operational amplifier A1 for generating the voltage V1 in response to drain voltage and reference bias voltage of the MOS transistor M1; and an operational amplifier A2 for generating the voltage V2 in response to drain voltage and reference bias voltage of the MOS transistor M2.SELECTED DRAWING: Figure 1 【課題】精度の高い電流を生成可能な電流生成回路を提供すること。【解決手段】一実施の形態によれば、電流生成回路１０は、バイポーラトランジスタＱ１，Ｑ２と、バイポーラトランジスタＱ１，Ｑ２のそれぞれに電圧Ｖ２に応じた電流Ｉ１，Ｉ２を流す電流分配回路１１と、バイポーラトランジスタＱ１と電流分配回路１１との間に設けられ、ゲートに電圧Ｖ１が供給されるＭＯＳトランジスタＭ１と、バイポーラトランジスタＱ２と電流分配回路１１との間に設けられ、ゲートに電圧Ｖ１が供給されるＭＯＳトランジスタＭ２と、ＭＯＳトランジスタＭ２とバイポーラトランジスタＱ２との間に設けられた抵抗素子Ｒ１と、ＭＯＳトランジスタＭ１のドレイン電圧と基準バイアス電圧とに応じた電圧Ｖ１を生成するオペアンプＡ１と、ＭＯＳトランジスタＭ２のドレイン電圧と基準バイアス電圧とに応じた電圧Ｖ２を生成するオペアンプＡ２と、を備える。【選択図】図１