SEMICONDUCTOR DEVICE

• Main Authors: NISHIO JOJI, OTA CHIHARU, SHIMIZU TATSUO, SHINOHE TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 21.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of lowering on-resistance.SOLUTION: A semiconductor device includes: a p-type SiC substrate, which has first and second surfaces and contains a p-type impurity and an n-type impurity, where when the p-type impurity is represented by element A and the n-type impurity is represented by element D, a combination of the element A and the element D is at least one combination of Al (aluminum), Ga (gallium) or In (indium) and N (nitrogen), or B (boron) and P (phosphorus), a ratio of the concentration of the element D to the concentration of the element A, which constitute the combination is 0.50 or more and 1.0 or less, and the concentration of the element A constituting the combination is 1×10cmor more and 1×10cmor less; an SiC layer provided on the first surface; a first electrode provided on the first surface side; and a second electrode provided on the second surface.SELECTED DRAWING: Figure 12 【課題】オン抵抗を低くすることのできる半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１と第２の面を有し、ｐ型不純物とｎ型不純物を含有し、ｐ型不純物を元素Ａ、ｎ型不純物を元素Ｄとする場合に、元素Ａと元素Ｄとの組み合わせが、Ａｌ（アルミニウム）、Ｇａ（ガリウム）またはＩｎ（インジウム）とＮ（窒素）、Ｂ（ボロン）とＰ（リン）の少なくとも一方の組み合わせであり、上記組み合わせを構成する元素Ｄの濃度の元素Ａの濃度に対する比が０．５０より大きく１．０より小さく、上記組み合わせを構成する元素Ａの濃度が１×１０１８ｃｍ−３以上１×１０２２ｃｍ−３以下であるｐ型ＳｉＣ基板と、第１の面上に設けられたＳｉＣ層と、第１の面側に設けられた第１の電極と、第２の面上に設けられた第２の電極と、を備える。【選択図】図１２