MAGNETIC MEMORY DEVICE

• Main Authors: MIYATA MIKIO, KOBAYASHI SHINYA, NOMA KENJI
• Format: Patent
• Language: English; Japanese
• Published: 21.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PROBLEM TO BE SOLVED: To provide a magnetic memory device (MRAM) which is improved in reliability in writing operation.SOLUTION: The magnetic memory device includes: a plurality of magnetic resistance elements; a memory cell array having a plurality of bit lines and a plurality of word lines to each...